Bibliographic Details
| Title: |
Epitaxial growth of Y3Fe5O12 thin films with perpendicular magnetic anisotropy. |
| Authors: |
Jianbo Fu, Muxin Hua, Xin Wen, Mingzhu Xue, Shilei Ding, Meng Wang, Pu Yu, Shunquan Liu, Jingzhi Han, Changsheng Wang, Honglin Du, Yingchang Yang, Jinbo Yang |
| Source: |
Applied Physics Letters; 5/15/2017, Vol. 110 Issue 20, p1-5, 5p, 1 Chart, 4 Graphs |
| Subject Terms: |
EPITAXY, CRYSTAL growth, EPITAXIAL layers, THIN films, PERPENDICULAR magnetic anisotropy, GADOLINIUM gallium garnet |
| Abstract: |
Here, we report the realization of epitaxial Y3Fe5O12 (YIG) thin films with perpendicular magnetic anisotropy (PMA). The films are grown on the substituted gadolinium gallium garnet substrate (SGGG) by pulsed laser deposition. It was found that a thin buffer layer of Sm3Ga5O12 (SmGG) grown on top of SGGG can suppress the strain relaxation, which helps induce a large enough PMA to overcome the shape anisotropy in YIG thin films. The reciprocal space mappings analysis reveals that the in-plane strain relaxation is suppressed, while the out-of-plane strain relaxation exhibits a strong dependence on the film thickness. We found that the PMA can be achieved for both bilayer (YIG/SmGG) and tri-layer (SmGG/YIG/SmGG) structural films with YIG layer thicknesses up to 20 nm and 40 nm, respectively [ABSTRACT FROM AUTHOR] |
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| Database: |
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