| Title: |
Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications. |
| Authors: |
Sheng-Chun Wang1 scwang@ndl.org.tw, Pin Su1 pinsu@mail.nctu.edu.tw, Kun-Ming Chen kmchen@ndl.org.tw, Kuo-Hsiang Liao, Bo-Yuan Chen, Sheng-Yi Huang, Cheng-Chou Hung, Guo-Wei Huang |
| Source: |
IEEE Transactions on Microwave Theory & Techniques. Apr2010, Vol. 58 Issue 4, p740-746. 7p. 1 Chart, 1 Graph. |
| Subject Terms: |
Metal oxide semiconductor field-effect transistors, Millimeter waves, Wave energy, Electronic modulation, Noise generators (Electronics), Frequency curves |
| Abstract: |
Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65-nm MOSFETs for the first time. Due to channel length modulation, the channel noise continues to increase and remains the most important noise source in the millimeter- wave band. Our experimental results further show that, with the downscaling of channel length, the gate resistance has more serious impact on the high-frequency noise parameters than the substrate resistance even in the millimeter-wave frequency. [ABSTRACT FROM AUTHOR] |
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| Database: |
Business Source Complete |
