Simulation of the step coverage for chemical vapor deposited silicon dioxide.
Title: | Simulation of the step coverage for chemical vapor deposited silicon dioxide. |
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Authors: | Wille, H., Burte, E., Ryssel, H. |
Source: | Journal of Applied Physics; April 1 1992, Vol. 71, p3532-3537, 6p |
Database: | Applied Science & Technology Source |
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RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.350908 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 3532 Titles: – TitleFull: Simulation of the step coverage for chemical vapor deposited silicon dioxide. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Wille, H. – PersonEntity: Name: NameFull: Burte, E. – PersonEntity: Name: NameFull: Ryssel, H. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: April 1 1992 Type: published Y: 1992 Identifiers: – Type: issn-print Value: 00218979 Numbering: – Type: volume Value: 71 Titles: – TitleFull: Journal of Applied Physics Type: main |
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