Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission.

Bibliographic Details
Title: Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission.
Authors: Coluzza, C., Lama, F., Frova, A.
Source: Journal of Applied Physics; September 15 1988, Vol. 64, p3304-3306, 3p
Database: Applied Science & Technology Source
More Details
ISSN:00218979
DOI:10.1063/1.341506
Published in:Journal of Applied Physics
Language:English