The Electrical Characteristics of 4H-SiC Schottky Diodes after Inductively Coupled Plasma Etching.

Bibliographic Details
Title: The Electrical Characteristics of 4H-SiC Schottky Diodes after Inductively Coupled Plasma Etching.
Authors: Plank, N. O. V., Jiang, Liudi, Gundlach, A. M.
Source: Journal of Electronic Materials; September 2003, Vol. 32 Issue 9, p964-971, 8p
Database: Applied Science & Technology Source
More Details
ISSN:03615235
DOI:10.1007/s11664-003-0231-y
Published in:Journal of Electronic Materials
Language:English