Chhowalla, M., Teo, K. B. K., & Ducati, C. (2001). Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition. Journal of Applied Physics, 90(10), 5308-5317. https://doi.org/10.1063/1.1410322
Chicago Style (17th ed.) CitationChhowalla, M., K. B. K. Teo, and C. Ducati. "Growth Process Conditions of Vertically Aligned Carbon Nanotubes Using Plasma Enhanced Chemical Vapor Deposition." Journal of Applied Physics 90, no. 10 (2001): 5308-5317. https://doi.org/10.1063/1.1410322.
MLA (8th ed.) CitationChhowalla, M., et al. "Growth Process Conditions of Vertically Aligned Carbon Nanotubes Using Plasma Enhanced Chemical Vapor Deposition." Journal of Applied Physics, vol. 90, no. 10, 2001, pp. 5308-5317, https://doi.org/10.1063/1.1410322.
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