Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN.

Bibliographic Details
Title: Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN.
Authors: Kim, S., Henry, R. L., Wickenden, A. E.
Source: Journal of Applied Physics; July 1 2001, Vol. 90 Issue 1, p252-259, 8p
Database: Applied Science & Technology Source
More Details
ISSN:00218979
DOI:10.1063/1.1378058
Published in:Journal of Applied Physics
Language:English