Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide.
| Title: | Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide. |
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| Authors: | Treu, M., Burte, E. P., Schörner, R. |
| Source: | Journal of Applied Physics; September 1 1998, Vol. 84 Issue 5, p2943-2948, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.368399 |
| Published in: | Journal of Applied Physics |
| Language: | English |