Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors.
| Title: | Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors. |
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| Authors: | Weger, M.1,2, k01402990@students.jku.at, Kuegler, J.1, Nelhiebel, M.1, Moser, M.1, Bockstedte, M.2, Pobegen, G.1 |
| Source: | Journal of Applied Physics; 7/21/2024, Vol. 136 Issue 3, p1-13, 13p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/5.0203724 |
| Published in: | Journal of Applied Physics |
| Language: | English |