Study on the mechanism of vacancy defects on electrical and optical properties of GaAs/InSe heterostructure.
| Title: | Study on the mechanism of vacancy defects on electrical and optical properties of GaAs/InSe heterostructure. |
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| Authors: | Wang, Xu1, Ouyang, Taoyuan1, Bai, Yaoning1, Li, Xinru1, Yan, Yuwei1, Wang, Zichen1, Jiang, Xiaodi1, Tan, Honglin1, 852419171@qq.com |
| Source: | Journal of Materials Science: Materials in Electronics; Sep2023, Vol. 34 Issue 25, p1-13, 13p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-023-11139-6 |
| Published in: | Journal of Materials Science: Materials in Electronics |
| Language: | English |