Study on the mechanism of vacancy defects on electrical and optical properties of GaAs/InSe heterostructure.

Bibliographic Details
Title: Study on the mechanism of vacancy defects on electrical and optical properties of GaAs/InSe heterostructure.
Authors: Wang, Xu1, Ouyang, Taoyuan1, Bai, Yaoning1, Li, Xinru1, Yan, Yuwei1, Wang, Zichen1, Jiang, Xiaodi1, Tan, Honglin1, 852419171@qq.com
Source: Journal of Materials Science: Materials in Electronics; Sep2023, Vol. 34 Issue 25, p1-13, 13p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-023-11139-6
Published in:Journal of Materials Science: Materials in Electronics
Language:English