Raman analysis of strain in p-type doped silicon nanostructures.

Bibliographic Details
Title: Raman analysis of strain in p-type doped silicon nanostructures.
Authors: Ureña-Begara, Ferran1, Vayrette, Renaud1, Bhaskar, Umesh Kumar2, Raskin, Jean-Pierre1
Source: Journal of Applied Physics; 2018, Vol. 124 Issue 9, pN.PAG-N.PAG, 6p, 1 Diagram, 5 Graphs
Database: Applied Science & Technology Source
More Details
ISSN:00218979
DOI:10.1063/1.5045736
Published in:Journal of Applied Physics
Language:English