Raman analysis of strain in p-type doped silicon nanostructures.
Title: | Raman analysis of strain in p-type doped silicon nanostructures. |
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Authors: | Ureña-Begara, Ferran1, Vayrette, Renaud1, Bhaskar, Umesh Kumar2, Raskin, Jean-Pierre1 |
Source: | Journal of Applied Physics; 2018, Vol. 124 Issue 9, pN.PAG-N.PAG, 6p, 1 Diagram, 5 Graphs |
Database: | Applied Science & Technology Source |
ISSN: | 00218979 |
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DOI: | 10.1063/1.5045736 |
Published in: | Journal of Applied Physics |
Language: | English |