Electron mobility enhancement in (100) oxygen-inserted silicon channel.

Bibliographic Details
Title: Electron mobility enhancement in (100) oxygen-inserted silicon channel.
Authors: Nuo Xu1, Hideki Takeuchi2, Hytha, Marek2, Cody, Nyles W.2, Stephenson, Robert J.2, Kwak, Byungil3, Seon Yong Cha3, Mears, Robert J.2, Tsu-Jae King Liu1
Source: Applied Physics Letters; 9/21/2015, Vol. 107 Issue 12, p1-5, 5p, 1 Chart, 5 Graphs
Database: Applied Science & Technology Source
More Details
ISSN:00036951
DOI:10.1063/1.4931431
Published in:Applied Physics Letters
Language:English