Electron mobility enhancement in (100) oxygen-inserted silicon channel.
Title: | Electron mobility enhancement in (100) oxygen-inserted silicon channel. |
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Authors: | Nuo Xu1, Hideki Takeuchi2, Hytha, Marek2, Cody, Nyles W.2, Stephenson, Robert J.2, Kwak, Byungil3, Seon Yong Cha3, Mears, Robert J.2, Tsu-Jae King Liu1 |
Source: | Applied Physics Letters; 9/21/2015, Vol. 107 Issue 12, p1-5, 5p, 1 Chart, 5 Graphs |
Database: | Applied Science & Technology Source |
ISSN: | 00036951 |
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DOI: | 10.1063/1.4931431 |
Published in: | Applied Physics Letters |
Language: | English |