| Title: |
High-Efficiency, Low-Loss, and Wideband 5.8 GHz Energy Harvester Designed Using TSMC 65 nm Process for IoT Self-Powered Nodes. |
| Authors: |
Rabah, Hebah1 (AUTHOR), Albasha, Lutfi1,2 (AUTHOR) lalbasha@aus.edu, Mir, Hasan1 (AUTHOR), Quadir, Nasir2 (AUTHOR), Abbas, Syed Zahid1 (AUTHOR) |
| Source: |
Energies (19961073). Feb2025, Vol. 18 Issue 4, p862. 21p. |
| Subject Terms: |
*ENERGY harvesting, *ELECTRIC power, *POWER resources, *ON-chip charge pumps, *STRAY currents, *METAL oxide semiconductor field-effect transistors |
| Abstract: |
Energy harvesting systems are becoming increasingly vital for sustainable power supply in Internet of Things (IoT) applications. These systems involve capturing and converting energy from environmental sources into electrical power. This paper presents a high-efficiency 5.8 GHz energy harvester for powering such devices, designed in a 65 nm pure CMOS process. The proposed design utilizes a metal-oxide-semiconductor field-effect-transistor-based Dickson charge pump energy harvester for high-frequency energy conversion. Simulation results are presented and discussed on the post-layout verified and extracted circuits with matching implemented to emulate the real-world testing scenarios. The design addresses challenges specific to high-frequency operation, including parasitic capacitances, frequency-dependent leakage currents, and impedance mismatches, ensuring optimal performance at higher frequencies. The evaluation focuses on key metrics such as output voltage and power conversion efficiency (PCE), with the harvester demonstrating an output voltage of 2.88 V and an efficiency of 82.94%. [ABSTRACT FROM AUTHOR] |
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