Bibliographic Details
| Title: |
Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs. |
| Authors: |
Lee, Hongseung1 (AUTHOR), Yoo, Jaewook1 (AUTHOR), Song, Hyeonjun1 (AUTHOR), Lee, Binhyeong2 (AUTHOR), Yoon, Soon Joo2 (AUTHOR), Lim, Seongbin1 (AUTHOR), Jeong, Jo Hak3 (AUTHOR), Kim, Soyeon1 (AUTHOR), Park, Minah1 (AUTHOR), Park, Seohyeon1 (AUTHOR), Jung, Sojin1 (AUTHOR), Pandit, Bhishma3 (AUTHOR), Moon, Taehwan4 (AUTHOR), Hwang, Jin-Ha5 (AUTHOR), Lee, Kiyoung5 (AUTHOR), Lee, Yoon Kyeung2 (AUTHOR), Heo, Keun3 (AUTHOR) kheo@jbnu.ac.kr, Bae, Hagyoul1 (AUTHOR) hagyoul.bae@jbnu.ac.kr |
| Source: |
Applied Physics Letters. 2/10/2025, Vol. 126 Issue 6, p1-5. 5p. |
| Subject Terms: |
*X-ray photoelectron spectroscopy, *ACCELERATED life testing, *MARKETING channels, *RADIATION, *TRANSISTORS |
| Abstract: |
This work reports the impact of gamma-ray (γ-ray) irradiation-induced degradation based on the trap behaviors in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. By employing multiple measurement configurations via low-frequency noise and direct current I–V characterization, we quantitatively investigated the energetic distribution of subgap density-of-states in the a-IGZO channel and the spatial distribution of oxide traps (Not) in the gate insulator, respectively. Also, the qualitative analysis was performed to determine the oxygen-related defects after γ-ray irradiation using x-ray photoelectron spectroscopy. Furthermore, the validity of our results was additionally confirmed by measuring the breakdown voltage and applying positive-bias stress to the fabricated devices exposed to radiation for accelerated tests. [ABSTRACT FROM AUTHOR] |
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| Database: |
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