Catalyst-free in-plane growth of high-quality ultra-thin InSb nanowires.

Bibliographic Details
Title: Catalyst-free in-plane growth of high-quality ultra-thin InSb nanowires.
Authors: He, Fengyue1,2 (AUTHOR), Wen, Lianjun1 (AUTHOR), Hou, Xiyu1,2 (AUTHOR), Li, Lin-Han1,2 (AUTHOR), Liu, Lei1 (AUTHOR), Zhuo, Ran1 (AUTHOR), Tan, Ping-Heng1,2 (AUTHOR), Pan, Dong1,2 (AUTHOR) pandong@semi.ac.cn, Zhao, Jianhua1,2 (AUTHOR) jhzhao@semi.ac.cn
Source: Applied Physics Letters. 11/25/2024, Vol. 125 Issue 22, p1-6. 6p.
Subject Terms: *ZINC crystals, *QUANTUM computing, *SPHALERITE, *SUBSTRATES (Materials science), *ELECTRON mobility, *NANOWIRES
Abstract: InSb nanowires (NWs) show an important application in topological quantum computing owing to their high electron mobility, strong spin–orbit interaction, and large g factor. Particularly, ultra-thin InSb NWs are expected to be used to solve the problem of multiple sub-band occupation for the detection of Majorana fermions. However, it is still difficult to epitaxially grow ultra-thin InSb NWs due to the surfactant effect of Sb. Here, we develop an in-plane self-assembled technique to grow catalyst-free ultra-thin InSb NWs on Ge(001) substrates by molecular-beam epitaxy. It is found that ultra-thin InSb NWs with a diameter as small as 17 nm can be obtained by this growth manner. More importantly, these NWs have aspect ratios of 40–100. We also find that the in-plane InSb NWs always grow along the [110] and [ 1 1 ¯ 0 ] directions, and they have the same {111} facets, which are caused by the lowest-surface energy of {111} crystal planes for NWs grown with a high Sb/In ratio. Detailed structural studies confirm that InSb NWs are high-quality zinc blende crystals, and there is a strict epitaxial relationship between the InSb NW and the Ge substrate. The in-plane InSb NWs have a similar Raman spectral linewidth compared with that of the single-crystal InSb substrate, further confirming their high crystal quality. Our work provides useful insights into the controlled growth of in-plane catalyst-free III–V NWs. [ABSTRACT FROM AUTHOR]
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Database: Academic Search Complete
More Details
ISSN:00036951
DOI:10.1063/5.0223513
Published in:Applied Physics Letters
Language:English