| Title: |
A Photoconductive Semiconductor Switch Driven Ion Beam Injector for Radiobiological Experiments. |
| Authors: |
Daisuke Satoh1 daisuke.satoh@kek.jp, Naoki Ikeda2, Mitsuhiro Yoshida1, Mitsuru Uesaka2 |
| Source: |
AIP Conference Proceedings. 2018, Vol. 2011 Issue 1, p1-3. 3p. |
| Subject Terms: |
*HEAVY ion accelerators, *DNA repair, *DNA damage, *RADIATION exposure, *ION beams, *HIGH voltages |
| Abstract: |
We have been developing a compact heavy ion accelerator to realize a real-time DNA lesion and repair monitoring system, which is used for evaluating the potential health risks of radiation exposure due to low-energy ion beams. In this system, a laser ion source (LIS) is used to generate low emittance and high-charge-state ion beams. A test bench of the laser ion source has been constructed and tested at KEK. To realize the compact heavy ion accelerator system, a serpentine coaxial transmission line accelerating structure is proposed. This accelerating structure consists of a wideband coaxial transmission line meandering along a beam axis whose inner and outer conductors have beam holes. A single cycle bipolar high voltage pulse generated by a photoconductive-semiconductor-switch (PCSS)-driven ultrafast high voltage pulse generator is fed into this inner conductor and the injected heavy ion beam is accelerated into the two gaps between the inner and outer conductors. A prototype of the serpentine coaxial transmission accelerating structure was designed using 3D finite integration technique (FIT). The simulation results indicate the possibility of multistage ion acceleration using one single-bipolar high-voltage pulse while propagating through the transmission line, as the reflection loss of this pulse in the one accelerating unit can be suppressed under 10-4. [ABSTRACT FROM AUTHOR] |
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