Bibliographic Details
| Title: |
Transferable tight-binding model for strained group IV and III-V materials and heterostructures. |
| Authors: |
Yaohua Tan1,2 tyhua02@gmail.com, Povolotskyi, Michael1, Kubis, Tillmann1, Boykin, Timothy B.3, Klimeck, Gerhard1 |
| Source: |
Physical Review B. Jul2016, Vol. 94 Issue 4, p1-1. 1p. |
| Subject Terms: |
*GROUP 14 elements, *HETEROSTRUCTURES |
| People: |
KUBIS, Tillmann, KLIMECK, Gerhard |
| Abstract: |
It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduce a transferable sp³d5s* tight-binding model with nearest-neighbor interactions for arbitrarily strained group IV and III-V materials. The tight-binding model is parametrized with respect to hybrid functional (HSE06) calculations for varieties of strained systems. The tight-binding calculations of ultrasmall superlattices formed by group IV and group III-V materials show good agreement with the corresponding HSE06 calculations. The application of the tight-binding model to superlattices demonstrates that the transferable tight-binding model with nearest-neighbor interactions can be obtained for group IV and III-V materials. [ABSTRACT FROM AUTHOR] |
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| Database: |
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