Bibliographic Details
| Title: |
Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC. |
| Authors: |
Ariyawong, Kanaparin1, Yun Ji Shin1, Dedulle, Jean-Marc1, Chaussende, Didier1 didier.chaussende@grenoble-inp.fr |
| Source: |
Crystal Growth & Design. 6/1/2016, Vol. 16 Issue 6, p3231-3236. 6p. |
| Subject Terms: |
*CRYSTAL growth, *FLUID flow, *CHEMICAL stability, *SILICON carbide, *CRYSTALLOGRAPHY, *STATISTICAL correlation |
| Abstract: |
We used numerical and analytical modeling to investigate fluid flow behaviors close to the growing 4H-SiC crystal surface in the top seeded solution growth process. First, we calculated the azimuthal and radial components of the fluid flow in front of the rotation disc. Second, we developed an analytical model describing the interaction between the step flow (of the vicinal crystal surface) and fluid flow components, considering the crystallography of 4H-SiC and introducing a phase parameter. The correlation of both models allows us to describe qualitatively the conditions for which macrosteps form and destabilize. This phenomenological description is in good agreement with the corresponding experimental observations that are also presented in this paper. [ABSTRACT FROM AUTHOR] |
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| Database: |
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