Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
Title: | Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET |
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Authors: | Bae, Hagyoul, Lee, Geon Bum, Yoo, Jaewook, Lee, Khwang-Sun, Ku, Ja-Yun, Kim, Kihyun, Kim, Jungsik, Ye, Peide D., Park, Jun-Young, Choi, Yang-Kyu |
Source: | In Solid State Electronics May 2024 215 |
Database: | ScienceDirect |
ISSN: | 00381101 |
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DOI: | 10.1016/j.sse.2024.108882 |
Published in: | Solid State Electronics |
Language: | English |