APA (7th ed.) Citation

Lin, Y., Chao, D., Liang, J., Shen, Y., Huang, C., Hall, S., & Mitrovic, I. Z. (2023). Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height. Solid State Electronics, 207, . https://doi.org/10.1016/j.sse.2023.108723

Chicago Style (17th ed.) Citation

Lin, Ya-Xun, Der-Sheng Chao, Jenq-Horng Liang, Yao-Luen Shen, Chih-Fang Huang, Steve Hall, and Ivona Z. Mitrovic. "Ultra-low Turn-on Voltage Quasi-vertical GaN Schottky Barrier Diode with Homogeneous Barrier Height." Solid State Electronics 207 (2023). https://doi.org/10.1016/j.sse.2023.108723.

MLA (8th ed.) Citation

Lin, Ya-Xun, et al. "Ultra-low Turn-on Voltage Quasi-vertical GaN Schottky Barrier Diode with Homogeneous Barrier Height." Solid State Electronics, vol. 207, 2023, https://doi.org/10.1016/j.sse.2023.108723.

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