Park, Y., Wang, Z., Yoo, S., & Lu, W. (2022). RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on, IEEE J. Explor. Solid-State Comput. Devices Circuits, 8(2), 93-101. https://doi.org/10.1109/JXCDC.2022.3202517

Park, Y., Z. Wang, S. Yoo, and W.D Lu. "RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on, IEEE J. Explor. Solid-State Comput. Devices Circuits 8, no. 2 (2022): 93-101. https://doi.org/10.1109/JXCDC.2022.3202517.

Park, Y., et al. "RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on, IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 8, no. 2, 2022, pp. 93-101, https://doi.org/10.1109/JXCDC.2022.3202517.