Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 1011) for High Density 1S1R Memory Array

Bibliographic Details
Title: Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 1011) for High Density 1S1R Memory Array
Authors: Wu, C. H., Lee, C. M., Chen, Y. S., Lee, H. Y., Ambrosi, E., Hsu, C. F., Vaziri, S., Chen, Y. Y., Nien, C. H., Hwang, R. L., Liao, P. J., Hou, D. H., Lee, Y.-H., Lee, T. Y., Chen, T. C., Chang, M. F., Wong, H.-S. P., Bao, X. Y.
Source: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021
Relation: 2021 Symposium on VLSI Technology
Database: IEEE Xplore Digital Library