Moench, S., Weiss, B., Reiner, R., Waltereit, P., Quay, R., Ambacher, O., & Kallfass, I. (2018). Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Wide Bandgap Power Devices and Applications (WiPDA), 2018 IEEE 6th Workshop on, 242-246. https://doi.org/10.1109/WiPDA.2018.8569066

Moench, Stefan, Beatrix Weiss, Richard Reiner, Patrick Waltereit, Rudiger Quay, Oliver Ambacher, and Ingmar Kallfass. "Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges." 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Wide Bandgap Power Devices and Applications (WiPDA), 2018 IEEE 6th Workshop on 2018: 242-246. https://doi.org/10.1109/WiPDA.2018.8569066.

Moench, Stefan, et al. "Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges." 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Wide Bandgap Power Devices and Applications (WiPDA), 2018 IEEE 6th Workshop on, 2018, pp. 242-246, https://doi.org/10.1109/WiPDA.2018.8569066.