Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors

Bibliographic Details
Title: Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors
Authors: Lim, D., Kim, M., Kim, Y., Cho, J., Kim, S.
Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(4):1578-1582 Apr, 2018
Database: IEEE Xplore Digital Library