New layout dependency in high-k/Metal Gate MOSFETs

Bibliographic Details
Title:	New layout dependency in high-k/Metal Gate MOSFETs
Authors:	Hamaguchi, M., Nair, D., Jaeger, D., Nishimura, H., Li, W., Na, M-H., Bernicot, C., Liang, J., Stahrenberg, K., Kim, K., Eller, M., Lee, K-C., Iwamoto, T., Teh, Y-W., Mori, S., Takasu, Y., Park, JH, Song, L., Kim, N-S., Kohler, S., Kothari, H., Han, J-P., Miyake, S., Meer, H.V., Arnaud, F., Barla, K., Sherony, M., Donaton, R., Celik, M., Miyashita, K., Narayanan, V., Wachnik, R., Chudzik, M., Sudijono, J., Ku, J.-H., Kim, J.D., Sekine, M., Johnson, S., Neumueller, W., Sampson, R., Kaste, E., Divakaruni, R., Matsuoka, F.
Source:	2011 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2011 IEEE International. :25.6.1-25.6.4 Dec, 2011
Relation:	2011 IEEE International Electron Devices Meeting (IEDM)
Database:	IEEE Xplore Digital Library

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