Characteristics of trench j-MOS power transistors
| Title: | Characteristics of trench j-MOS power transistors |
|---|---|
| Authors: | MacIver, B.A., Valeri, S.J., Jain, K.C., Erskine, J.C., Rossen, R. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 10(8):380-382 Aug, 1989 |
| Database: | IEEE Xplore Digital Library |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/55.31763 PhysicalDescription: Pagination: PageCount: 3 StartPage: 380 Titles: – TitleFull: Characteristics of trench j-MOS power transistors Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: MacIver, B.A. – PersonEntity: Name: NameFull: Valeri, S.J. – PersonEntity: Name: NameFull: Jain, K.C. – PersonEntity: Name: NameFull: Erskine, J.C. – PersonEntity: Name: NameFull: Rossen, R. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Type: published Y: 1989 Identifiers: – Type: issn-print Value: 07413106 – Type: issn-print Value: 15580563 – Type: issn-locals Value: edseee.IEEEJournals Numbering: – Type: volume Value: 10 – Type: issue Value: 8 Titles: – TitleFull: IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. Type: main |
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