MacIver, B., Valeri, S., Jain, K., Erskine, J., & Rossen, R. (1989). Characteristics of trench j-MOS power transistors. IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett., 10(8), 380-382. https://doi.org/10.1109/55.31763

MacIver, B.A, S.J Valeri, K.C Jain, J.C Erskine, and R. Rossen. "Characteristics of Trench J-MOS Power Transistors." IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. 10, no. 8 (1989): 380-382. https://doi.org/10.1109/55.31763.

MacIver, B.A, et al. "Characteristics of Trench J-MOS Power Transistors." IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett., vol. 10, no. 8, 1989, pp. 380-382, https://doi.org/10.1109/55.31763.