Gate effect on Hall voltage in a InSb/FM device

Bibliographic Details
Title: Gate effect on Hall voltage in a InSb/FM device
Authors: Kim, W.Y., Joonyeon Chang, Han, S.H., Lee, W.Y.
Source: INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Magnetics Conference Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International. :641-642 2005
Relation: INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference
Database: IEEE Xplore Digital Library