Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
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term="%22Bandy%2C+K%2E%22">Bandy, K.</searchLink><br /><searchLink fieldCode="AR" term="%22Belyansky%2C+M%2E%22">Belyansky, M.</searchLink><br /><searchLink fieldCode="AR" term="%22Bonnoit%2C+A%2E%22">Bonnoit, A.</searchLink><br /><searchLink fieldCode="AR" term="%22Bronner%2C+G%2E%22">Bronner, G.</searchLink><br /><searchLink fieldCode="AR" term="%22Chan%2C+V%2E%22">Chan, V.</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+X%2E%22">Chen, X.</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+Z%2E%22">Chen, Z.</searchLink><br /><searchLink fieldCode="AR" term="%22Chidambarrao%2C+D%2E%22">Chidambarrao, D.</searchLink><br /><searchLink fieldCode="AR" term="%22Chou%2C+A%2E%22">Chou, A.</searchLink><br /><searchLink fieldCode="AR" term="%22Clark%2C+W%2E%22">Clark, W.</searchLink><br /><searchLink fieldCode="AR" term="%22Crowder%2C+S%2EW%2E%22">Crowder, S.W.</searchLink><br /><searchLink fieldCode="AR" term="%22Engel%2C+B%2E%22">Engel, B.</searchLink><br /><searchLink 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term="%22Kepler%2C+N%2E%22">Kepler, N.</searchLink> – Name: TitleSource Label: Source Group: Src Data: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :1075-1077 2004 – Name: NoteTitleSource Label: Relation Group: SrcInfo Data: 2004 International Electron Devices Meeting |
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