Enhancing the Performance for High-Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Using Self-Assembled Chip-Scale Inclined Sidewall
Title: | Enhancing the Performance for High-Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Using Self-Assembled Chip-Scale Inclined Sidewall |
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Authors: | Hao, L., Wang, L., Guo, Y., Sun, X., Guo, K., Shen, C., Zhang, T., Zhang, X., Wang, S., Jia, X., Wang, J., Li, J., Zhang, Y., Zhang, Z., Liu, N., Yan, J. |
Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 46(3):377-380 Mar, 2025 |
Database: | IEEE Xplore Digital Library |
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RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2025.3531443 PhysicalDescription: Pagination: PageCount: 4 StartPage: 377 Titles: – TitleFull: Enhancing the Performance for High-Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Using Self-Assembled Chip-Scale Inclined Sidewall Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Hao, L. – PersonEntity: Name: NameFull: Wang, L. – PersonEntity: Name: NameFull: Guo, Y. – PersonEntity: Name: NameFull: Sun, X. – PersonEntity: Name: NameFull: Guo, K. – PersonEntity: Name: NameFull: Shen, C. – PersonEntity: Name: NameFull: Zhang, T. – PersonEntity: Name: NameFull: Zhang, X. – PersonEntity: Name: NameFull: Wang, S. – PersonEntity: Name: NameFull: Jia, X. – PersonEntity: Name: NameFull: Wang, J. – PersonEntity: Name: NameFull: Li, J. – PersonEntity: Name: NameFull: Zhang, Y. – PersonEntity: Name: NameFull: Zhang, Z. – PersonEntity: Name: NameFull: Liu, N. – PersonEntity: Name: NameFull: Yan, J. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 07413106 – Type: issn-print Value: 15580563 – Type: issn-locals Value: edseee.IEEEJournals Numbering: – Type: volume Value: 46 – Type: issue Value: 3 Titles: – TitleFull: IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. Type: main |
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