High RA Dual-MTJ SOT-MRAM devices for High Speed (10ns) Compute-in-Memory Applications
| Title: | High RA Dual-MTJ SOT-MRAM devices for High Speed (10ns) Compute-in-Memory Applications |
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| Authors: | Song, M. Y., Chen, K. L., Chen, K. M., Chang, K. T., Wang, I. J., Hsin, Y. C., Lin, C. Y., Ambrosi, E., Khwa, Win-San, Lu, Y. L., Hu, C. Y., Yang, S. Y., Li, S. H., Wei, J. H., Lee, T. Y., Wang, Y. J., Chang, M. F., Pai, C. F., Bao, X. Y. |
| Source: | 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023 |
| Relation: | 2023 International Electron Devices Meeting (IEDM) |
| Database: | IEEE Xplore Digital Library |
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