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Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability, shelf stability, and luminance

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Title: Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability, shelf stability, and luminance
Authors: Zi Ye, Mengyu Chen, Xingtong Chen, Wenchen Ma, Xiaojuan Sun, Longjia Wu, Xiongfeng Lin, Yu Chen, Song Chen
Source: npj Flexible Electronics, Vol 6, Iss 1, Pp 1-7 (2022)
Publisher Information: Nature Portfolio, 2022.
Publication Year: 2022
Collection: LCC:Electronics
LCC:Materials of engineering and construction. Mechanics of materials
Subject Terms: Electronics, TK7800-8360, Materials of engineering and construction. Mechanics of materials, TA401-492
More Details: Abstract The shelf-stability issue, originating from the ZnO-induced positive aging effect, poses a significant challenge to industrializing the display technology based on solution-processed quantum-dot light-emitting diodes (QLEDs). Currently, none of the proposed solutions can simultaneously inhibit exciton quenching caused by the ZnO-based electron-transporting layer (ETL) and retain other advantages of ZnO. Here in this work, we propose a bilayer design of ETL in which a buffer layer assembled of SnO2 nanoparticles (NPs) suppresses the QD-ETL exciton quenching and tunes charge balance while ZnO NPs provide high electron conductivity. As a result, the bottom-emitting QLED combining capped ZnO and SnO2 buffer exhibit a maximum luminance over 100,000 cd m−2 and a T 95 operational lifetime averaging 6200 h at 1000 cd m−2 on the premise of entirely inhibiting positive aging.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2397-4621
Relation: https://doaj.org/toc/2397-4621
DOI: 10.1038/s41528-022-00231-2
Access URL: https://doaj.org/article/d2fbd301a28e41a397d1d5ef92f8ccc0
Accession Number: edsdoj.2fbd301a28e41a397d1d5ef92f8ccc0
Database: Directory of Open Access Journals
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  Data: <searchLink fieldCode="AR" term="%22Zi+Ye%22">Zi Ye</searchLink><br /><searchLink fieldCode="AR" term="%22Mengyu+Chen%22">Mengyu Chen</searchLink><br /><searchLink fieldCode="AR" term="%22Xingtong+Chen%22">Xingtong Chen</searchLink><br /><searchLink fieldCode="AR" term="%22Wenchen+Ma%22">Wenchen Ma</searchLink><br /><searchLink fieldCode="AR" term="%22Xiaojuan+Sun%22">Xiaojuan Sun</searchLink><br /><searchLink fieldCode="AR" term="%22Longjia+Wu%22">Longjia Wu</searchLink><br /><searchLink fieldCode="AR" term="%22Xiongfeng+Lin%22">Xiongfeng Lin</searchLink><br /><searchLink fieldCode="AR" term="%22Yu+Chen%22">Yu Chen</searchLink><br /><searchLink fieldCode="AR" term="%22Song+Chen%22">Song Chen</searchLink>
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  Data: npj Flexible Electronics, Vol 6, Iss 1, Pp 1-7 (2022)
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  Data: Abstract The shelf-stability issue, originating from the ZnO-induced positive aging effect, poses a significant challenge to industrializing the display technology based on solution-processed quantum-dot light-emitting diodes (QLEDs). Currently, none of the proposed solutions can simultaneously inhibit exciton quenching caused by the ZnO-based electron-transporting layer (ETL) and retain other advantages of ZnO. Here in this work, we propose a bilayer design of ETL in which a buffer layer assembled of SnO2 nanoparticles (NPs) suppresses the QD-ETL exciton quenching and tunes charge balance while ZnO NPs provide high electron conductivity. As a result, the bottom-emitting QLED combining capped ZnO and SnO2 buffer exhibit a maximum luminance over 100,000 cd m−2 and a T 95 operational lifetime averaging 6200 h at 1000 cd m−2 on the premise of entirely inhibiting positive aging.
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