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Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation

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Title: Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation
Authors: Jia Du, Jun Zhou, Lianzhen Zhang, Na Yang, Xin Ding, Jin Zhang
Source: Nanomaterials, Vol 12, Iss 3, p 536 (2022)
Publisher Information: MDPI AG, 2022.
Publication Year: 2022
Collection: LCC:Chemistry
Subject Terms: Ge2Sb2Te5, laser-induced crystallization, multi-level intermediate states, Raman spectra, thermal simulations, Chemistry, QD1-999
More Details: Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of Ge2Sb2Te5 thin films induced via employing a nanosecond multi-pulse laser with different energy and pulse duration were performed by Raman spectroscopy, reflection measurement and thermal simulations. Upon laser-crystallized Ge2Sb2Te5 films, optical functions change drastically, leading to distinguishable reflectivity contrasts of intermediate states between amorphous and crystalline phases due to different crystallinity. The changes in optical intensity for laser-crystallized Ge2Sb2Te5 are also accompanied by micro-structure evolution, since high-energy and longer pulses result in higher-level intermediate states (corresponding to high reflection intensity) and largely contribute to the formation of stronger Raman peaks. By employing thermal analysis, we further demonstrated that the variations of both laser fluence and pulse duration play decisive roles in the degree of crystallinity of Ge2Sb2Te5 films. Laser fluence is mainly responsible for the variations in crystallization temperature, while the varying pulse duration has a great impact on the crystallization time. The present study offers a deeper understanding of the crystallization characteristic of phase change material Ge2Sb2Te5.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2079-4991
Relation: https://www.mdpi.com/2079-4991/12/3/536; https://doaj.org/toc/2079-4991
DOI: 10.3390/nano12030536
Access URL: https://doaj.org/article/2979dd971a484e6e87aac077f563725d
Accession Number: edsdoj.2979dd971a484e6e87aac077f563725d
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  Data: Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation
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  Data: <searchLink fieldCode="AR" term="%22Jia+Du%22">Jia Du</searchLink><br /><searchLink fieldCode="AR" term="%22Jun+Zhou%22">Jun Zhou</searchLink><br /><searchLink fieldCode="AR" term="%22Lianzhen+Zhang%22">Lianzhen Zhang</searchLink><br /><searchLink fieldCode="AR" term="%22Na+Yang%22">Na Yang</searchLink><br /><searchLink fieldCode="AR" term="%22Xin+Ding%22">Xin Ding</searchLink><br /><searchLink fieldCode="AR" term="%22Jin+Zhang%22">Jin Zhang</searchLink>
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  Data: Nanomaterials, Vol 12, Iss 3, p 536 (2022)
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  Data: <searchLink fieldCode="DE" term="%22Ge2Sb2Te5%22">Ge2Sb2Te5</searchLink><br /><searchLink fieldCode="DE" term="%22laser-induced+crystallization%22">laser-induced crystallization</searchLink><br /><searchLink fieldCode="DE" term="%22multi-level+intermediate+states%22">multi-level intermediate states</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectra%22">Raman spectra</searchLink><br /><searchLink fieldCode="DE" term="%22thermal+simulations%22">thermal simulations</searchLink><br /><searchLink fieldCode="DE" term="%22Chemistry%22">Chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22QD1-999%22">QD1-999</searchLink>
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  Data: Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of Ge2Sb2Te5 thin films induced via employing a nanosecond multi-pulse laser with different energy and pulse duration were performed by Raman spectroscopy, reflection measurement and thermal simulations. Upon laser-crystallized Ge2Sb2Te5 films, optical functions change drastically, leading to distinguishable reflectivity contrasts of intermediate states between amorphous and crystalline phases due to different crystallinity. The changes in optical intensity for laser-crystallized Ge2Sb2Te5 are also accompanied by micro-structure evolution, since high-energy and longer pulses result in higher-level intermediate states (corresponding to high reflection intensity) and largely contribute to the formation of stronger Raman peaks. By employing thermal analysis, we further demonstrated that the variations of both laser fluence and pulse duration play decisive roles in the degree of crystallinity of Ge2Sb2Te5 films. Laser fluence is mainly responsible for the variations in crystallization temperature, while the varying pulse duration has a great impact on the crystallization time. The present study offers a deeper understanding of the crystallization characteristic of phase change material Ge2Sb2Te5.
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      – SubjectFull: laser-induced crystallization
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      – SubjectFull: multi-level intermediate states
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