Jacobs, A. G., Feigelson, B. N., Hite, J. K., Gorsak, C. A., Luna, L. E., Anderson, T. J., & Kub, F. J. (2019). Polarity dependent implanted p-type dopant activation in GaN. Japanese journal of applied physics, 58(C), SCCD07.
Chicago Style (17th ed.) CitationJacobs, Alan G., Boris N. Feigelson, Jennifer K. Hite, Cameron A. Gorsak, Lunet E. Luna, Travis J. Anderson, and Francis J. Kub. "Polarity Dependent Implanted P-type Dopant Activation in GaN." Japanese Journal of Applied Physics 58, no. C (2019): SCCD07.
MLA (8th ed.) CitationJacobs, Alan G., et al. "Polarity Dependent Implanted P-type Dopant Activation in GaN." Japanese Journal of Applied Physics, vol. 58, no. C, 2019, p. SCCD07.
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