Room temperature Si:S barrier infrared detector with broadband response up to 4.4{\mu}m
| Title: | Room temperature Si:S barrier infrared detector with broadband response up to 4.4{\mu}m |
|---|---|
| Authors: | Zhu, He, Xiao, Yunlong, Yu, Zhongyang, Zhu, Jiaqi, Li, Qing, Ye, Zhenyu, Wang, Xi, Liu, Changlong, Pan, Changyu, Shan, Yufeng, Duan, Junli, Wu, Huizhen, Hu, Weida, Dai, Ning |
| Publication Year: | 2024 |
| Collection: | Physics (Other) |
| Subject Terms: | Physics - Applied Physics |
| More Details: | Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing mid-infrared sensitive materials hinder the large-scale production and utilization of mid-infrared detectors. To address this issue, we developed Si:S barrier detectors employing sulfur doped silicon and a sophisticated band barrier design. Since the transport of dark current and photo current is separated, the barrier design effectively suppresses the dark current while allowing the photo current to leverage gain mechanisms, thereby substantially improving signal-to-noise ratio. As a result, the detector exhibits an infrared response range covering from 1.12 to 4.4{\mu}m with a peak at 3.3{\mu}m, excluding its intrinsic response in visible range. Its peak quantum efficiency surpasses that of the best mid-infrared silicon-based detector reported to date by an order of magnitude, reaching 2% at room temperature. The peak detectivity at 90K is 1.4E11 Jones @1.4V and decreases to 4.4E9 Jones @1.4V, 210K, comparable to the typical III-V and IV-VI photodetectors at one thousandth fabrication cost. Leveraging the well-established silicon-based manufacturing process, this device holds promise for large-scale production at a reduced price, offering a cost-effective solution for future mid-infrared detection. |
| Document Type: | Working Paper |
| Access URL: | http://arxiv.org/abs/2405.02668 |
| Accession Number: | edsarx.2405.02668 |
| Database: | arXiv |
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| Header | DbId: edsarx DbLabel: arXiv An: edsarx.2405.02668 RelevancyScore: 1098 AccessLevel: 3 PubType: Report PubTypeId: report PreciseRelevancyScore: 1098.029296875 |
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| Items | – Name: Title Label: Title Group: Ti Data: Room temperature Si:S barrier infrared detector with broadband response up to 4.4{\mu}m – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Zhu%2C+He%22">Zhu, He</searchLink><br /><searchLink fieldCode="AR" term="%22Xiao%2C+Yunlong%22">Xiao, Yunlong</searchLink><br /><searchLink fieldCode="AR" term="%22Yu%2C+Zhongyang%22">Yu, Zhongyang</searchLink><br /><searchLink fieldCode="AR" term="%22Zhu%2C+Jiaqi%22">Zhu, Jiaqi</searchLink><br /><searchLink fieldCode="AR" term="%22Li%2C+Qing%22">Li, Qing</searchLink><br /><searchLink fieldCode="AR" term="%22Ye%2C+Zhenyu%22">Ye, Zhenyu</searchLink><br /><searchLink fieldCode="AR" term="%22Wang%2C+Xi%22">Wang, Xi</searchLink><br /><searchLink fieldCode="AR" term="%22Liu%2C+Changlong%22">Liu, Changlong</searchLink><br /><searchLink fieldCode="AR" term="%22Pan%2C+Changyu%22">Pan, Changyu</searchLink><br /><searchLink fieldCode="AR" term="%22Shan%2C+Yufeng%22">Shan, Yufeng</searchLink><br /><searchLink fieldCode="AR" term="%22Duan%2C+Junli%22">Duan, Junli</searchLink><br /><searchLink fieldCode="AR" term="%22Wu%2C+Huizhen%22">Wu, Huizhen</searchLink><br /><searchLink fieldCode="AR" term="%22Hu%2C+Weida%22">Hu, Weida</searchLink><br /><searchLink fieldCode="AR" term="%22Dai%2C+Ning%22">Dai, Ning</searchLink> – Name: DatePubCY Label: Publication Year Group: Date Data: 2024 – Name: Subset Label: Collection Group: HoldingsInfo Data: Physics (Other) – Name: Subject Label: Subject Terms Group: Su Data: <searchLink fieldCode="DE" term="%22Physics+-+Applied+Physics%22">Physics - Applied Physics</searchLink> – Name: Abstract Label: Description Group: Ab Data: Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing mid-infrared sensitive materials hinder the large-scale production and utilization of mid-infrared detectors. To address this issue, we developed Si:S barrier detectors employing sulfur doped silicon and a sophisticated band barrier design. Since the transport of dark current and photo current is separated, the barrier design effectively suppresses the dark current while allowing the photo current to leverage gain mechanisms, thereby substantially improving signal-to-noise ratio. As a result, the detector exhibits an infrared response range covering from 1.12 to 4.4{\mu}m with a peak at 3.3{\mu}m, excluding its intrinsic response in visible range. Its peak quantum efficiency surpasses that of the best mid-infrared silicon-based detector reported to date by an order of magnitude, reaching 2% at room temperature. The peak detectivity at 90K is 1.4E11 Jones @1.4V and decreases to 4.4E9 Jones @1.4V, 210K, comparable to the typical III-V and IV-VI photodetectors at one thousandth fabrication cost. Leveraging the well-established silicon-based manufacturing process, this device holds promise for large-scale production at a reduced price, offering a cost-effective solution for future mid-infrared detection. – Name: TypeDocument Label: Document Type Group: TypDoc Data: Working Paper – Name: URL Label: Access URL Group: URL Data: <link linkTarget="URL" linkTerm="http://arxiv.org/abs/2405.02668" linkWindow="_blank">http://arxiv.org/abs/2405.02668</link> – Name: AN Label: Accession Number Group: ID Data: edsarx.2405.02668 |
| PLink | https://login.libproxy.scu.edu/login?url=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.2405.02668 |
| RecordInfo | BibRecord: BibEntity: Subjects: – SubjectFull: Physics - Applied Physics Type: general Titles: – TitleFull: Room temperature Si:S barrier infrared detector with broadband response up to 4.4{\mu}m Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zhu, He – PersonEntity: Name: NameFull: Xiao, Yunlong – PersonEntity: Name: NameFull: Yu, Zhongyang – PersonEntity: Name: NameFull: Zhu, Jiaqi – PersonEntity: Name: NameFull: Li, Qing – PersonEntity: Name: NameFull: Ye, Zhenyu – PersonEntity: Name: NameFull: Wang, Xi – PersonEntity: Name: NameFull: Liu, Changlong – PersonEntity: Name: NameFull: Pan, Changyu – PersonEntity: Name: NameFull: Shan, Yufeng – PersonEntity: Name: NameFull: Duan, Junli – PersonEntity: Name: NameFull: Wu, Huizhen – PersonEntity: Name: NameFull: Hu, Weida – PersonEntity: Name: NameFull: Dai, Ning IsPartOfRelationships: – BibEntity: Dates: – D: 04 M: 05 Type: published Y: 2024 |
| ResultId | 1 |