Reconfigurable Stochastic Neurons Based on Strain Engineered Low Barrier Nanomagnets

Bibliographic Details
Title: Reconfigurable Stochastic Neurons Based on Strain Engineered Low Barrier Nanomagnets
Authors: Rahman, Rahnuma, Ganguly, Samiran, Bandyopadhyay, Supriyo
Publication Year: 2024
Collection: Computer Science
Condensed Matter
Subject Terms: Computer Science - Emerging Technologies, Condensed Matter - Mesoscale and Nanoscale Physics, Electrical Engineering and Systems Science - Systems and Control
More Details: Stochastic neurons are efficient hardware accelerators for solving a large variety of combinatorial optimization problems. "Binary" stochastic neurons (BSN) are those whose states fluctuate randomly between two levels +1 and -1, with the probability of being in either level determined by an external bias. "Analog" stochastic neurons (ASNs), in contrast, can assume any state between the two levels randomly (hence "analog") and can perform analog signal processing. They may be leveraged for such tasks as temporal sequence learning, processing and prediction. Both BSNs and ASNs can be used to build efficient and scalable neural networks. Both can be implemented with low (potential energy) barrier nanomagnets (LBMs) whose random magnetization orientations encode the binary or analog state variables. The difference between them is that the potential energy barrier in a BSN LBM, albeit low, is much higher than that in an ASN LBM. As a result, a BSN LBM has a clear double well potential profile, which makes its magnetization orientation assume one of two orientations at any time, resulting in the binary behavior. ASN nanomagnets, on the other hand, hardly have any energy barrier at all and hence lack the double well feature. That makes their magnetizations fluctuate in an analog fashion. Hence, one can reconfigure an ASN to a BSN, and vice-versa, by simply raising and lowering the energy barrier. If the LBM is magnetostrictive, then this can be done with local (electrically generated) strain. Such a reconfiguration capability heralds a powerful field programmable architecture for a p-computer, and the energy cost for this type of reconfiguration is miniscule.
Comment: Some typos in the previous version have been corrected
Document Type: Working Paper
Access URL: http://arxiv.org/abs/2402.06168
Accession Number: edsarx.2402.06168
Database: arXiv
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  Label: Title
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  Data: Reconfigurable Stochastic Neurons Based on Strain Engineered Low Barrier Nanomagnets
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  Data: <searchLink fieldCode="AR" term="%22Rahman%2C+Rahnuma%22">Rahman, Rahnuma</searchLink><br /><searchLink fieldCode="AR" term="%22Ganguly%2C+Samiran%22">Ganguly, Samiran</searchLink><br /><searchLink fieldCode="AR" term="%22Bandyopadhyay%2C+Supriyo%22">Bandyopadhyay, Supriyo</searchLink>
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  Data: 2024
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  Data: Computer Science<br />Condensed Matter
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– Name: Abstract
  Label: Description
  Group: Ab
  Data: Stochastic neurons are efficient hardware accelerators for solving a large variety of combinatorial optimization problems. "Binary" stochastic neurons (BSN) are those whose states fluctuate randomly between two levels +1 and -1, with the probability of being in either level determined by an external bias. "Analog" stochastic neurons (ASNs), in contrast, can assume any state between the two levels randomly (hence "analog") and can perform analog signal processing. They may be leveraged for such tasks as temporal sequence learning, processing and prediction. Both BSNs and ASNs can be used to build efficient and scalable neural networks. Both can be implemented with low (potential energy) barrier nanomagnets (LBMs) whose random magnetization orientations encode the binary or analog state variables. The difference between them is that the potential energy barrier in a BSN LBM, albeit low, is much higher than that in an ASN LBM. As a result, a BSN LBM has a clear double well potential profile, which makes its magnetization orientation assume one of two orientations at any time, resulting in the binary behavior. ASN nanomagnets, on the other hand, hardly have any energy barrier at all and hence lack the double well feature. That makes their magnetizations fluctuate in an analog fashion. Hence, one can reconfigure an ASN to a BSN, and vice-versa, by simply raising and lowering the energy barrier. If the LBM is magnetostrictive, then this can be done with local (electrically generated) strain. Such a reconfiguration capability heralds a powerful field programmable architecture for a p-computer, and the energy cost for this type of reconfiguration is miniscule.<br />Comment: Some typos in the previous version have been corrected
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      – SubjectFull: Computer Science - Emerging Technologies
        Type: general
      – SubjectFull: Condensed Matter - Mesoscale and Nanoscale Physics
        Type: general
      – SubjectFull: Electrical Engineering and Systems Science - Systems and Control
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      – TitleFull: Reconfigurable Stochastic Neurons Based on Strain Engineered Low Barrier Nanomagnets
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            NameFull: Rahman, Rahnuma
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            NameFull: Ganguly, Samiran
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            NameFull: Bandyopadhyay, Supriyo
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              M: 02
              Type: published
              Y: 2024
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