Report
View in EDS

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Bibliographic Details
Title: Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
Authors: Jin, Ik Kyeong, Kumar, Krittika, Rendell, Matthew J., Huang, Jonathan Y., Escott, Chris C., Hudson, Fay E., Lim, Wee Han, Dzurak, Andrew S., Hamilton, Alexander R., Liles, Scott D.
Source: Nano Lett. 2023, 23, 4, 1261-1266
Publication Year: 2022
Collection: Condensed Matter
Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics
More Details: Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance (EDSR). We achieve smooth control of the inter-dot coupling rate over two orders of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 {\mu}s for a known hole occupation. These results provide a path towards improving the quality and controllability of hole spin-qubits.
Document Type: Working Paper
DOI: 10.1021/acs.nanolett.2c04417
Access URL: http://arxiv.org/abs/2211.00178
Accession Number: edsarx.2211.00178
Database: arXiv
FullText Text:
  Availability: 0
CustomLinks:
  – Url: http://arxiv.org/abs/2211.00178
    Name: EDS - Arxiv
    Category: fullText
    Text: View this record from Arxiv
    MouseOverText: View this record from Arxiv
  – Url: https://resolver.ebsco.com/c/xy5jbn/result?sid=EBSCO:edsarx&genre=article&issn=&ISBN=&volume=&issue=&date=20221031&spage=&pages=&title=Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform&atitle=Combining%20n-MOS%20Charge%20Sensing%20with%20p-MOS%20Silicon%20Hole%20Double%20Quantum%20Dots%20in%20a%20CMOS%20platform&aulast=Jin%2C%20Ik%20Kyeong&id=DOI:10.1021/acs.nanolett.2c04417
    Name: Full Text Finder (for New FTF UI) (s8985755)
    Category: fullText
    Text: Find It @ SCU Libraries
    MouseOverText: Find It @ SCU Libraries
Header DbId: edsarx
DbLabel: arXiv
An: edsarx.2211.00178
RelevancyScore: 1037
AccessLevel: 3
PubType: Report
PubTypeId: report
PreciseRelevancyScore: 1037.17175292969
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Jin%2C+Ik+Kyeong%22">Jin, Ik Kyeong</searchLink><br /><searchLink fieldCode="AR" term="%22Kumar%2C+Krittika%22">Kumar, Krittika</searchLink><br /><searchLink fieldCode="AR" term="%22Rendell%2C+Matthew+J%2E%22">Rendell, Matthew J.</searchLink><br /><searchLink fieldCode="AR" term="%22Huang%2C+Jonathan+Y%2E%22">Huang, Jonathan Y.</searchLink><br /><searchLink fieldCode="AR" term="%22Escott%2C+Chris+C%2E%22">Escott, Chris C.</searchLink><br /><searchLink fieldCode="AR" term="%22Hudson%2C+Fay+E%2E%22">Hudson, Fay E.</searchLink><br /><searchLink fieldCode="AR" term="%22Lim%2C+Wee+Han%22">Lim, Wee Han</searchLink><br /><searchLink fieldCode="AR" term="%22Dzurak%2C+Andrew+S%2E%22">Dzurak, Andrew S.</searchLink><br /><searchLink fieldCode="AR" term="%22Hamilton%2C+Alexander+R%2E%22">Hamilton, Alexander R.</searchLink><br /><searchLink fieldCode="AR" term="%22Liles%2C+Scott+D%2E%22">Liles, Scott D.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: Nano Lett. 2023, 23, 4, 1261-1266
– Name: DatePubCY
  Label: Publication Year
  Group: Date
  Data: 2022
– Name: Subset
  Label: Collection
  Group: HoldingsInfo
  Data: Condensed Matter
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Condensed+Matter+-+Mesoscale+and+Nanoscale+Physics%22">Condensed Matter - Mesoscale and Nanoscale Physics</searchLink>
– Name: Abstract
  Label: Description
  Group: Ab
  Data: Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance (EDSR). We achieve smooth control of the inter-dot coupling rate over two orders of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 {\mu}s for a known hole occupation. These results provide a path towards improving the quality and controllability of hole spin-qubits.
– Name: TypeDocument
  Label: Document Type
  Group: TypDoc
  Data: Working Paper
– Name: DOI
  Label: DOI
  Group: ID
  Data: 10.1021/acs.nanolett.2c04417
– Name: URL
  Label: Access URL
  Group: URL
  Data: <link linkTarget="URL" linkTerm="http://arxiv.org/abs/2211.00178" linkWindow="_blank">http://arxiv.org/abs/2211.00178</link>
– Name: AN
  Label: Accession Number
  Group: ID
  Data: edsarx.2211.00178
PLink https://login.libproxy.scu.edu/login?url=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.2211.00178
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1021/acs.nanolett.2c04417
    Subjects:
      – SubjectFull: Condensed Matter - Mesoscale and Nanoscale Physics
        Type: general
    Titles:
      – TitleFull: Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Jin, Ik Kyeong
      – PersonEntity:
          Name:
            NameFull: Kumar, Krittika
      – PersonEntity:
          Name:
            NameFull: Rendell, Matthew J.
      – PersonEntity:
          Name:
            NameFull: Huang, Jonathan Y.
      – PersonEntity:
          Name:
            NameFull: Escott, Chris C.
      – PersonEntity:
          Name:
            NameFull: Hudson, Fay E.
      – PersonEntity:
          Name:
            NameFull: Lim, Wee Han
      – PersonEntity:
          Name:
            NameFull: Dzurak, Andrew S.
      – PersonEntity:
          Name:
            NameFull: Hamilton, Alexander R.
      – PersonEntity:
          Name:
            NameFull: Liles, Scott D.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 31
              M: 10
              Type: published
              Y: 2022
ResultId 1