| Title: |
A continuous metal-insulator transition driven by spin correlations |
| Authors: |
Feng, Yejun, Wang, Yishu, Silevitch, D. M., Cooper, S. E., Mandrus, D., Lee, Patrick A., Rosenbaum, T. F. |
| Source: |
Nature Communications 12, 2779 (2021) |
| Publication Year: |
2020 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science |
| More Details: |
Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an important and well-recognized class of transitions, but insulators purely driven by spin correlations are much less common, as the reduced energy scale often invites competition from other degrees of freedom. Here we demonstrate a clean example of a spin-correlation-driven metal-insulator transition in the all-in-all-out pyrochlore antiferromagnet Cd2Os2O7, where the lattice symmetry is fully preserved by the antiferromagnetism. After the antisymmetric linear magnetoresistance from conductive, ferromagnetic domain walls is carefully removed experimentally, the Hall coefficient of the bulk reveals four Fermi surfaces, two of electron type and two of hole type, sequentially departing the Fermi level with decreasing temperature below the N\'eel temperature, T_N. Contrary to the common belief of concurrent magnetic and metal-insulator transitions in Cd2Os2O7, the charge gap of a continuous metal-insulator transition opens only at T~10K, well below T_N=227K. The insulating mechanism resolved by the Hall coefficient parallels the Slater picture, but without a folded Brillouin zone, and contrasts sharply with the behavior of Mott insulators and spin density waves, where the electronic gap opens above and at T_N, respectively.
Comment: Three figures |
| Document Type: |
Working Paper |
| DOI: |
10.1038/s41467-021-23039-6 |
| Access URL: |
http://arxiv.org/abs/2009.13277 |
| Accession Number: |
edsarx.2009.13277 |
| Database: |
arXiv |
