One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon.
| Title: | One Nanometer HfO |
|---|---|
| Authors: | Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef |
| Source: | Advanced Electronic Materials; Jun2022, Vol. 8 Issue 6, p1-10, 10p |
| Subject Terms: | TUNNEL junctions (Materials science), POLARIZATION (Electricity), ATOMIC layer deposition, FERROELECTRIC materials, LEAD titanate, TUNNEL design & construction, NONVOLATILE memory |
| Abstract: | In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploits polarization‐dependent tunnel current across a thin ferroelectric barrier. This work integrates FTJs with complementary metal‐oxide‐semiconductor‐compatible Zr‐doped HfO2 (Zr:HfO2) ferroelectric barriers of just 1 nm thickness, grown by atomic layer deposition on silicon. These 1 nm Zr:HfO2 tunnel junctions exhibit large polarization‐driven electroresistance (>20 000%), the largest value reported for HfO2‐based FTJs. In addition, due to just a 1 nm ferroelectric barrier, these junctions provide large tunneling current (>1 A cm−2) at low read voltage, orders of magnitude larger than reported thicker HfO2‐based FTJs. Therefore, this proof‐of‐principle demonstration provides an approach to simultaneously overcome three major drawbacks of prototypical FTJs: a Si‐compatible ultrathin ferroelectric, large electroresistance, and large read current for high‐speed operation. [ABSTRACT FROM AUTHOR] |
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| Database: | Complementary Index |
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| Items | – Name: Title Label: Title Group: Ti Data: One Nanometer HfO<subscript>2</subscript>‐Based Ferroelectric Tunnel Junctions on Silicon. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Cheema%2C+Suraj+S%2E%22">Cheema, Suraj S.</searchLink><br /><searchLink fieldCode="AR" term="%22Shanker%2C+Nirmaan%22">Shanker, Nirmaan</searchLink><br /><searchLink fieldCode="AR" term="%22Hsu%2C+Cheng‐Hsiang%22">Hsu, Cheng‐Hsiang</searchLink><br /><searchLink fieldCode="AR" term="%22Datar%2C+Adhiraj%22">Datar, Adhiraj</searchLink><br /><searchLink fieldCode="AR" term="%22Bae%2C+Jongho%22">Bae, Jongho</searchLink><br /><searchLink fieldCode="AR" term="%22Kwon%2C+Daewoong%22">Kwon, Daewoong</searchLink><br /><searchLink fieldCode="AR" term="%22Salahuddin%2C+Sayeef%22">Salahuddin, Sayeef</searchLink> – Name: TitleSource Label: Source Group: Src Data: Advanced Electronic Materials; Jun2022, Vol. 8 Issue 6, p1-10, 10p – Name: Subject Label: Subject Terms Group: Su Data: <searchLink fieldCode="DE" term="%22TUNNEL+junctions+%28Materials+science%29%22">TUNNEL junctions (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22POLARIZATION+%28Electricity%29%22">POLARIZATION (Electricity)</searchLink><br /><searchLink fieldCode="DE" term="%22ATOMIC+layer+deposition%22">ATOMIC layer deposition</searchLink><br /><searchLink fieldCode="DE" term="%22FERROELECTRIC+materials%22">FERROELECTRIC materials</searchLink><br /><searchLink fieldCode="DE" term="%22LEAD+titanate%22">LEAD titanate</searchLink><br /><searchLink fieldCode="DE" term="%22TUNNEL+design+%26+construction%22">TUNNEL design & construction</searchLink><br /><searchLink fieldCode="DE" term="%22NONVOLATILE+memory%22">NONVOLATILE memory</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploits polarization‐dependent tunnel current across a thin ferroelectric barrier. This work integrates FTJs with complementary metal‐oxide‐semiconductor‐compatible Zr‐doped HfO2 (Zr:HfO2) ferroelectric barriers of just 1 nm thickness, grown by atomic layer deposition on silicon. These 1 nm Zr:HfO2 tunnel junctions exhibit large polarization‐driven electroresistance (>20 000%), the largest value reported for HfO2‐based FTJs. In addition, due to just a 1 nm ferroelectric barrier, these junctions provide large tunneling current (>1 A cm−2) at low read voltage, orders of magnitude larger than reported thicker HfO2‐based FTJs. Therefore, this proof‐of‐principle demonstration provides an approach to simultaneously overcome three major drawbacks of prototypical FTJs: a Si‐compatible ultrathin ferroelectric, large electroresistance, and large read current for high‐speed operation. [ABSTRACT FROM AUTHOR] – Name: Abstract Label: Group: Ab Data: <i>Copyright of Advanced Electronic Materials is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/aelm.202100499 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 1 Subjects: – SubjectFull: TUNNEL junctions (Materials science) Type: general – SubjectFull: POLARIZATION (Electricity) Type: general – SubjectFull: ATOMIC layer deposition Type: general – SubjectFull: FERROELECTRIC materials Type: general – SubjectFull: LEAD titanate Type: general – SubjectFull: TUNNEL design & construction Type: general – SubjectFull: NONVOLATILE memory Type: general Titles: – TitleFull: One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Cheema, Suraj S. – PersonEntity: Name: NameFull: Shanker, Nirmaan – PersonEntity: Name: NameFull: Hsu, Cheng‐Hsiang – PersonEntity: Name: NameFull: Datar, Adhiraj – PersonEntity: Name: NameFull: Bae, Jongho – PersonEntity: Name: NameFull: Kwon, Daewoong – PersonEntity: Name: NameFull: Salahuddin, Sayeef IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2022 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 2199160X Numbering: – Type: volume Value: 8 – Type: issue Value: 6 Titles: – TitleFull: Advanced Electronic Materials Type: main |
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