Nanoscale ion implantation using focussed highly charged ions.

Bibliographic Details
Title: Nanoscale ion implantation using focussed highly charged ions.
Authors: Räcke, Paul (AUTHOR) paul.raecke@iom-leipzig.de, Wunderlich, Ralf (AUTHOR), Gerlach, Jürgen W (AUTHOR), Meijer, Jan (AUTHOR), Spemann, Daniel (AUTHOR)
Source: New Journal of Physics. Aug2020, Vol. 22 Issue 8, p1-7. 7p.
Subject Terms: *ION implantation, *ION bombardment, *ION sources, *ELECTRON beams, *IONS, *ELECTRONS
Abstract: We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond using focussed, mask-less irradiation with Ar8+ ions with sub-micron three dimensional placement accuracy. The ion optical system was optimised and is characterised via secondary electron imaging. The smallest measured foci are below 200 nm, using objective aperture diameters of 5 and 10 µm, showing that nanoscale ion implantation using an EBIS is feasible. [ABSTRACT FROM AUTHOR]
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  Data: Nanoscale ion implantation using focussed highly charged ions.
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  Data: <searchLink fieldCode="AR" term="%22Räcke%2C+Paul%22">Räcke, Paul</searchLink> (AUTHOR)<i> paul.raecke@iom-leipzig.de</i><br /><searchLink fieldCode="AR" term="%22Wunderlich%2C+Ralf%22">Wunderlich, Ralf</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gerlach%2C+Jürgen+W%22">Gerlach, Jürgen W</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Meijer%2C+Jan%22">Meijer, Jan</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Spemann%2C+Daniel%22">Spemann, Daniel</searchLink> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22New+Journal+of+Physics%22">New Journal of Physics</searchLink>. Aug2020, Vol. 22 Issue 8, p1-7. 7p.
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  Data: *<searchLink fieldCode="DE" term="%22ION+implantation%22">ION implantation</searchLink><br />*<searchLink fieldCode="DE" term="%22ION+bombardment%22">ION bombardment</searchLink><br />*<searchLink fieldCode="DE" term="%22ION+sources%22">ION sources</searchLink><br />*<searchLink fieldCode="DE" term="%22ELECTRON+beams%22">ELECTRON beams</searchLink><br />*<searchLink fieldCode="DE" term="%22IONS%22">IONS</searchLink><br />*<searchLink fieldCode="DE" term="%22ELECTRONS%22">ELECTRONS</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond using focussed, mask-less irradiation with Ar8+ ions with sub-micron three dimensional placement accuracy. The ion optical system was optimised and is characterised via secondary electron imaging. The smallest measured foci are below 200 nm, using objective aperture diameters of 5 and 10 µm, showing that nanoscale ion implantation using an EBIS is feasible. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of New Journal of Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/1367-2630/aba0e6
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        Text: English
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        Type: general
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              Text: Aug2020
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