Nanoscale ion implantation using focussed highly charged ions.
Title: | Nanoscale ion implantation using focussed highly charged ions. |
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Authors: | Räcke, Paul (AUTHOR) paul.raecke@iom-leipzig.de, Wunderlich, Ralf (AUTHOR), Gerlach, Jürgen W (AUTHOR), Meijer, Jan (AUTHOR), Spemann, Daniel (AUTHOR) |
Source: | New Journal of Physics. Aug2020, Vol. 22 Issue 8, p1-7. 7p. |
Subject Terms: | *ION implantation, *ION bombardment, *ION sources, *ELECTRON beams, *IONS, *ELECTRONS |
Abstract: | We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond using focussed, mask-less irradiation with Ar8+ ions with sub-micron three dimensional placement accuracy. The ion optical system was optimised and is characterised via secondary electron imaging. The smallest measured foci are below 200 nm, using objective aperture diameters of 5 and 10 µm, showing that nanoscale ion implantation using an EBIS is feasible. [ABSTRACT FROM AUTHOR] |
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Items | – Name: Title Label: Title Group: Ti Data: Nanoscale ion implantation using focussed highly charged ions. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Räcke%2C+Paul%22">Räcke, Paul</searchLink> (AUTHOR)<i> paul.raecke@iom-leipzig.de</i><br /><searchLink fieldCode="AR" term="%22Wunderlich%2C+Ralf%22">Wunderlich, Ralf</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gerlach%2C+Jürgen+W%22">Gerlach, Jürgen W</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Meijer%2C+Jan%22">Meijer, Jan</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Spemann%2C+Daniel%22">Spemann, Daniel</searchLink> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22New+Journal+of+Physics%22">New Journal of Physics</searchLink>. Aug2020, Vol. 22 Issue 8, p1-7. 7p. – Name: Subject Label: Subject Terms Group: Su Data: *<searchLink fieldCode="DE" term="%22ION+implantation%22">ION implantation</searchLink><br />*<searchLink fieldCode="DE" term="%22ION+bombardment%22">ION bombardment</searchLink><br />*<searchLink fieldCode="DE" term="%22ION+sources%22">ION sources</searchLink><br />*<searchLink fieldCode="DE" term="%22ELECTRON+beams%22">ELECTRON beams</searchLink><br />*<searchLink fieldCode="DE" term="%22IONS%22">IONS</searchLink><br />*<searchLink fieldCode="DE" term="%22ELECTRONS%22">ELECTRONS</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond using focussed, mask-less irradiation with Ar8+ ions with sub-micron three dimensional placement accuracy. The ion optical system was optimised and is characterised via secondary electron imaging. The smallest measured foci are below 200 nm, using objective aperture diameters of 5 and 10 µm, showing that nanoscale ion implantation using an EBIS is feasible. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of New Journal of Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1088/1367-2630/aba0e6 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1 Subjects: – SubjectFull: ION implantation Type: general – SubjectFull: ION bombardment Type: general – SubjectFull: ION sources Type: general – SubjectFull: ELECTRON beams Type: general – SubjectFull: IONS Type: general – SubjectFull: ELECTRONS Type: general Titles: – TitleFull: Nanoscale ion implantation using focussed highly charged ions. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Räcke, Paul – PersonEntity: Name: NameFull: Wunderlich, Ralf – PersonEntity: Name: NameFull: Gerlach, Jürgen W – PersonEntity: Name: NameFull: Meijer, Jan – PersonEntity: Name: NameFull: Spemann, Daniel IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2020 Type: published Y: 2020 Identifiers: – Type: issn-print Value: 13672630 Numbering: – Type: volume Value: 22 – Type: issue Value: 8 Titles: – TitleFull: New Journal of Physics Type: main |
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