Nanoscale ion implantation using focussed highly charged ions.

Bibliographic Details
Title: Nanoscale ion implantation using focussed highly charged ions.
Authors: Räcke, Paul (AUTHOR) paul.raecke@iom-leipzig.de, Wunderlich, Ralf (AUTHOR), Gerlach, Jürgen W (AUTHOR), Meijer, Jan (AUTHOR), Spemann, Daniel (AUTHOR)
Source: New Journal of Physics. Aug2020, Vol. 22 Issue 8, p1-7. 7p.
Subject Terms: *ION implantation, *ION bombardment, *ION sources, *ELECTRON beams, *IONS, *ELECTRONS
Abstract: We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond using focussed, mask-less irradiation with Ar8+ ions with sub-micron three dimensional placement accuracy. The ion optical system was optimised and is characterised via secondary electron imaging. The smallest measured foci are below 200 nm, using objective aperture diameters of 5 and 10 µm, showing that nanoscale ion implantation using an EBIS is feasible. [ABSTRACT FROM AUTHOR]
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Database: Academic Search Complete
More Details
ISSN:13672630
DOI:10.1088/1367-2630/aba0e6
Published in:New Journal of Physics
Language:English