2 × 128 Silicon Avalanche Photodiode Linear Arrays With High Uniformity

Authors: Wang, T., Peng, H., Cao, P., Song, C., Zheng, W.

Source: IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 36(10):645-648 May, 2024

A Low Noise 0.18-μm Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating

Authors: Lee, Kuo-Yu, Chang, Yin-Jung, Chen, Jau-Horng

Source: 2020 Opto-Electronics and Communications Conference (OECC) Opto-Electronics and Communications Conference (OECC), 2020. :1-3 Oct, 2020

Relation: 2020 Opto-Electronics and Communications Conference (OECC)

Sensitive Infrared Photon Counting Detection by Nondegenerate Two-Photon Absorption in Si APD

Authors: Xu, G., Ren, X., Miao, Q., Yan, M., Pan, H., Chen, X., Wu, G., Wu, E.

Source: IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 31(24):1944-1947 Dec, 2019

Advances in Middle Infrared Laser Crystals and Its Applications

Contributors: Duan, Xiaoming, Dou, Renqin, Li, Linjun, Yang, Xiaotao

Subject Terms: long pulse laser, plasma plume, composite materials, CFRP, GFRP, 1989 nm, Ho:YAP, AO Q-switched laser, long-wave infrared, ZnGeP2 crystal, Ho:YAG MOPA, nonlinear infrared optical crystal, AgGaGe5Se12 crystal, Bridgman growth method, solid-state, diode-pumped, Q-switched, infrared and far-infrared lasers, surface plasmon polaritons (SPPs), metal-insulator-metal (MIM) waveguide, Fano line-shapes, refractive index sensing, millisecond pulse laser, silicon avalanche photodiode (Si-APD), external capacitance, photocurrent, carrier flow, lowering of the barrier, APD, Dy:CaF2-SrF2, crystal growth, temperature gradient technology, midinfrared crystal, Sellmeier dispersion formula, mid-infrared photonics, chalcopyrite semiconductors, orthorhombic ternary chalcogenides, harmonic generation, continuum generation, group velocity matching, infrared pulse laser, fused silica, plasma, interaction between laser and matter, numerical simulation, plasma expansion velocity, 2.78 μm mid-infrared emission, Er/Tm, PbF2 laser crystal, energy transfer mechanism, first-principles calculation, β-Ga2O3 crystal, optical floating zone, saturable absorber, Q-switch, laser-induced damage threshold, ZnGeP2, interference coating, magnetorheological polish, laser, Ho:YVO4, double-pass-pumping, laser diode, Technology: general issues, Industrial chemistry and chemical engineering

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Access URL: https://directory.doabooks.org/handle/20.500.12854/91176
https://mdpi.com/books/pdfview/book/5821

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

Authors: Tiancai Wang, Hongling Peng, Peng Cao, Qiandong Zhuang, Jie Deng, Jian Chen, Wanhua Zheng

Source: Sensors, Vol 24, Iss 2, p 640 (2024)

Subject Terms: silicon avalanche photodiode, multiple epitaxy technology, ion implantation, Chemical technology, TP1-1185

File Description: electronic resource

Relation: https://www.mdpi.com/1424-8220/24/2/640; https://doaj.org/toc/1424-8220

Access URL: https://doaj.org/article/4d30b263950741859775750b5797d9ff

A Novel, High-Dynamic-Range, High-Speed, and High-Sensitivity CMOS Imager Using Time-Domain Single-Photon Counting and Avalanche Photodiodes

Authors: El-Desouki, M. M., Palubiak, D., Deen, M. J., Fang, Q., Marinov, O.

Source: IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 11(4):1078-1083 Apr, 2011

Fast Scintillation X-Ray Detector Using Proportional-Mode Si-APD and a HfO2-Nanoparticle-Doped Plastic Scintillator

Authors: Inoue, K., Koshimizu, M., Hiyama, F., Asai, K., Nishikido, F., Haruki, R., Kishimoto, S.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 65(4):1012-1017 Apr, 2018

Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\mu$m Technology

Authors: Faramarzpour, N., Deen, M. J., Shirani, S., Fang , Q.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 55(3):760-767 Mar, 2008

Hydrogen Redistribution and Performance Improvement of Silicon Avalanche Photodiode by Low-Temperature Annealing

Authors: Kawauchi, T., Yonemura, H., Kishimoto, S., Fukutani, K.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 33(8):1162-1164 Aug, 2012

Modeling and Characterizing Optical CMOS Sensors for Biomedical Low-Intensity Light Detection

Authors: Kamrani, Ehsan, Hamady, Mohamad, Lesage, Frederic, Sawan, Mohamad

Source: 2013 29th Southern Biomedical Engineering Conference Biomedical Engineering Conference (SBEC), 2013 29th Southern. :83-84 May, 2013

Relation: 2013 29th Southern Biomedical Engineering Conference (SBEC)

External Synchronization of 160-GHz Optical Beat Signal by Optical Phase-Locked Loop Technique

Authors: Takasaka, S., Ozeki, Y., Namiki, S., Sakano, M.

Source: IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 18(23):2457-2459 Dec, 2006

Temperature Rise Characteristics of Silicon Avalanche Photodiodes in Different External Capacitance Circuits Irradiated by Infrared Millisecond Pulse Laser

Authors: Liang Chen, Zhi Wei, Di Wang, Hong-Xu Liu, Guang-Yong Jin

Source: Crystals, Vol 11, Iss 8, p 866 (2021)

Subject Terms: millisecond pulse laser, silicon avalanche photodiode (Si-APD), external capacitance, Crystallography, QD901-999

File Description: electronic resource

Relation: https://www.mdpi.com/2073-4352/11/8/866; https://doaj.org/toc/2073-4352

Access URL: https://doaj.org/article/f05585dd760c450c84ce9c4df0a23649

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