Physical vapor transport growth of layered β-In2Se3 nanoflakes: Investigation of morphological, Raman and photo detection characteristics

Authors: Tamar Kazmi, Syed Mesam ^a, Rashid, Rashad ^{b, c, ⁎}, Chi-Chung Ling, Francis ^c, Ali, Zahid ^b, Rafiq, Muhammad Aftab ^a, Raffi, Muhammad ^b

Source: In Optical Materials March 2025 160

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

Authors: Veaceslav Ursaki, Tudor Braniste, Victor Zalamai, Emil Rusu, Vladimir Ciobanu, Vadim Morari, Daniel Podgornii, Pier Carlo Ricci, Rainer Adelung, Ion Tiginyanu

Source: Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 490-499 (2024)

Subject Terms: aeromaterial, crystallographic structure, luminescence, physical vapor transport, scanning electron microscopy (sem), x-ray diffraction (xrd), Technology, Chemical technology, TP1-1185, Science, Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2190-4286

Access URL: https://doaj.org/article/aa923278ecf145c5ad032380df72afdb

Silicon Carbide

Contributors: Vivona, Marilena, Jennings, Mike

Subject Terms: SiC power MOSFET, JFET width, JFET doping concentration, gate oxide thickness, orthogonal P+ layout, gate-drain capacitance, high-frequency figure-of-merit (HF-FOM), cell topology, dodecagonal cell, octagonal cell, gate-to-drain capacitance (Cgd), specific ON-resistance (Ron,sp), high-frequency figure of merit (HF-FOM), switching performance, 4H-SiC MOSFET, nitridation, scattering, Hall measurements, body bias, transverse electric field, silicon carbide, integrated photonics, material growth, local oxidation, atomic force microscopy, C-AFM, doping, successive AFM characterizations, doped silicon carbide, MOSFET, high-κ, dielectrics, ALD, WBG, 3C-SiC, Schottky contact, p-diode model, non-uniformity, 4H-SiC single crystal, physical vapor transport (PVT), discoloration switching, ToF-SIMS, Raman spectroscopy, thermal gate oxide, SiC, charge-driven breakdown, QBD, CCS, CVS, PVS, electron trapping model, pMOSFET, 4H-SiC, HTGB, HTRB, pulsed stress, threshold voltage instability, bilayer graphene, field effect transistors, nanofabrication, Raman spectra analysis, DC and RF characterizations, Oncology, Language teaching and learning, English, For ELT / ESL learning, courses, examinations and certificates

File Description: application/octet-stream

Access URL: https://directory.doabooks.org/handle/20.500.12854/152813
https://mdpi.com/books/pdfview/book/10007

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

Authors: Zhe Chuan Feng, Manika Tun Nafisa, Yao Liu, Li Zhang, Yingming Wang, Xiaorong Xia, Ze Tao, Chuanwei Zhang, Jeffrey Yiin, Benjamin Klein, Ian Ferguson

Source: Photonics, Vol 11, Iss 12, p 1161 (2024)

Subject Terms: AlN crystals, physical vapor transport, temperature-dependent Raman scattering, variable-angle spectroscopic ellipsometry, atomic force microscopy, residual tensile stress, Applied optics. Photonics, TA1501-1820

File Description: electronic resource

Relation: https://www.mdpi.com/2304-6732/11/12/1161; https://doaj.org/toc/2304-6732

Access URL: https://doaj.org/article/c23349b425c34025af043ff3dcea451a

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Authors: Zhou, Q., Wu, H., Li, H., Tang, X., Qin, Z., Dong, D., Lin, Y., Lu, C., Qiu, R., Zheng, R., Wang, J., Li, B.

Source: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 7:662-667 2019

In situ Growth Transition Towards Helical Crystals of Achiral Molecules

Authors: Youngkwan Yoon, Jin Young Koo, Hee Cheul Choi

Source: Small Structures, Vol 4, Iss 11, Pp n/a-n/a (2023)

Subject Terms: achiral molecules, growth transition, helical crystals, physical vapor transport, screw dislocation, Physics, QC1-999, Chemistry, QD1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2688-4062

Access URL: https://doaj.org/article/ac6ec85d810d438ca792f57ded76720e

Physical vapor transport of Bi2Te3 using elemental Bi and Te sources

Authors: Concepcion, O., Vazquez, O., de Melo, O., Escobosa, A.

Source: 2015 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC) Power, Electronics and Computing (ROPEC), 2015 IEEE International Autumn Meeting on. :1-3 Nov, 2015

Relation: 2015 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC)

Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process

Authors: Qikun Wang, Dan Lei, Jiali Huang, Xiaojuan Sun, Dabing Li, Zhenxiang Zhou, Liang Wu

Source: Frontiers in Materials, Vol 9 (2023)

Subject Terms: aluminum nitride, 3-inch, physical vapor transport, homoepitaxial growth, UV transparency, Technology

File Description: electronic resource

Relation: https://www.frontiersin.org/articles/10.3389/fmats.2022.1128468/full; https://doaj.org/toc/2296-8016

Access URL: https://doaj.org/article/a66f31cf9de7452e851dadb3ba893733

Physical Vapor Transport Growth of Antiferromagnetic CrCl3 Flakes Down to Monolayer Thickness

Authors: Jia Wang, Zahra Ahmadi, David Lujan, Jeongheon Choe, Takashi Taniguchi, Kenji Watanabe, Xiaoqin Li, Jeffrey E. Shield, Xia Hong

Source: Advanced Science, Vol 10, Iss 3, Pp n/a-n/a (2023)

Subject Terms: CrCl3, physical vapor transport, tunnel junction, tunneling magnetoresistance, van der Waals magnet, Science

File Description: electronic resource

Relation: https://doaj.org/toc/2198-3844

Access URL: https://doaj.org/article/1d7d348e7dcd4b5f877095641b6b64cd

Growth and Characterization of Centimeter-Scale Pentacene Crystals for Optoelectronic Devices

Authors: Valery A. Postnikov, Artem A. Kulishov, Georgy A. Yurasik, Nataliya I. Sorokina, Timofei A. Sorokin, Vadim V. Grebenev

Source: Crystals, Vol 13, Iss 7, p 999 (2023)

Subject Terms: pentacene, single crystal growth, physical vapor transport, single-crystal X-ray diffraction, crystal structure, 5,14-pentacenedione, Crystallography, QD901-999

File Description: electronic resource

Relation: https://www.mdpi.com/2073-4352/13/7/999; https://doaj.org/toc/2073-4352

Access URL: https://doaj.org/article/cc57cf9a24c84c37a5aa7f0690a0fe27

"A Novel Growth Technique for Large Diameter AlN Single Crystals"

Contributors: Timmerman, Andrew

File Description: Medium: ED; Size: 7.63MB

Access URL: http://www.osti.gov/scitech/servlets/purl/970807

Comparative Study of Bulk and Nanoengineered Doped ZnSe

Authors: Brett Setera, Ching-Hua Su, Bradley Arnold, Fow-Sen Choa, Lisa Kelly, Rachit Sood, N. B. Singh

Source: Crystals, Vol 12, Iss 1, p 71 (2022)

Subject Terms: zinc selenide, growth, nanocrystals, clustering, reactive Solution, physical vapor transport, Crystallography, QD901-999

File Description: electronic resource

Relation: https://www.mdpi.com/2073-4352/12/1/71; https://doaj.org/toc/2073-4352

Access URL: https://doaj.org/article/75a3a6a6946c4a57af9b727fe572a940

Morphology-Controlled Vapor Phase Growth and Characterization of One-Dimensional GaTe Nanowires and Two-Dimensional Nanosheets for Potential Visible-Light Active Photocatalysts

Authors: Li-Chia Tien, Yu-Che Shih

Source: Nanomaterials, Vol 11, Iss 3, p 778 (2021)

Subject Terms: 1D, 2D, GaTe, physical vapor transport, visible-light active photocatalysts, Chemistry, QD1-999

File Description: electronic resource

Relation: https://www.mdpi.com/2079-4991/11/3/778; https://doaj.org/toc/2079-4991

Access URL: https://doaj.org/article/eacb2aa490ce4471924c2fdeb09a7c22

Comparative Analysis of Hg2Br2 and Hg2BrxCl2-x Crystals Grown via PVT

Authors: Ojun Kwon, Kyoungah Kim, Shi-Gwan Woo, Gun-Eik Jang, Byungjin Cho

Source: Crystals, Vol 10, Iss 12, p 1096 (2020)

Subject Terms: mercury halides, physical vapor transport (PVT), crystal growth, Crystallography, QD901-999

File Description: electronic resource

Relation: https://www.mdpi.com/2073-4352/10/12/1096; https://doaj.org/toc/2073-4352

Access URL: https://doaj.org/article/51bc392aa2f24f30b4c455b9bbc2f7df

Large Area Free-Standing Single Crystalline Films of p-Quinquephenyl: Growth, Structure and Photoluminescence Properties

Authors: Valery A. Postnikov, Nataliya I. Sorokina, Maria S. Lyasnikova, Artem A. Kulishov, Alexey E. Voloshin, Oleg V. Borshchev, Nikolay M. Surin, Evgeniya A. Svidchenko, Sergey A. Ponomarenko

Source: Crystals, Vol 10, Iss 5, p 363 (2020)

Subject Terms: p-quinquephenyl, single crystals, crystal growth, solutions, physical vapor transport, SCXRD, Crystallography, QD901-999

File Description: electronic resource

Relation: https://www.mdpi.com/2073-4352/10/5/363; https://doaj.org/toc/2073-4352

Access URL: https://doaj.org/article/fd2bd2673304492d8f74d566b1dca32a

The Physical Vapor Transport Method for Bulk AlN Crystal Growth

Authors: Wen-Hao Chen, Zuo-Yan Qin, Xu-Yong Tian, Xu-Hui Zhong, Zhen-Hua Sun, Bai-Kui Li, Rui-Sheng Zheng, Yuan Guo, Hong-Lei Wu

Source: Molecules, Vol 24, Iss 8, p 1562 (2019)

Subject Terms: bulk AlN crystal, inverse temperature gradient, dominant growth, crystalline quality, physical vapor transport, Organic chemistry, QD241-441

File Description: electronic resource

Relation: https://www.mdpi.com/1420-3049/24/8/1562; https://doaj.org/toc/1420-3049

Access URL: https://doaj.org/article/80181f4f0594460f9a33639d868a96cd

This result is not displayed to guests.
Login for full access.

Photoconductivity and Radiation Response of Vapor Grown Pb2P2Se6 Single Crystals

Authors: Ekanayake, V., Hart, A., Kandel, R., Nagorny, S., McEleney, K., Bazalova, M., Wang, P.L.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. PP(99):1-1

This result is not displayed to guests.
Login for full access.

This result is not displayed to guests.
Login for full access.