Demonstration of Effective Intrinsic Electron Velocity >107 cm/s in Ultrawide Bandgap Al₀.₆₄Ga₀.₃₆N Channel HEMTs

Authors: Seshadri, P., Chen, J., Stephenson, K., Mamun, M.A., Bai, R., Wang, Z., Pasayat, S., Khan, A., Gupta, C.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(11):6604-6608 Nov, 2024

Characterization of Phase Shift in UTC Photodiode and MUTC Photodiode

Authors: Dong, Xiaowen, Liu, Kai, Huang, Yongqing, Duan, Xiaofeng, Ren, Xiaomin

Source: 2024 22nd International Conference on Optical Communications and Networks (ICOCN) Optical Communications and Networks (ICOCN), 2024 22nd International Conference on. :1-3 Jul, 2024

Relation: 2024 22nd International Conference on Optical Communications and Networks (ICOCN)

Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT

Authors: Wang, M., Lv, Y., Zhou, H., Cui, P., Liu, C., Lin, Z.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(2):160-163 Feb, 2024

Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz

Authors: He, Y., Zhang, L., Cheng, Z., Li, C., He, J., Xie, S., Wu, X., Wu, C., Zhang, Y.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(6):3001-3004 Jun, 2023

Electric Field Engineering in Graded-Channel GaN-Based HEMTs

Authors: Venkatesan, Nivedhita, Moon, Jeong-Sun, Fay, Patrick

Source: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021 IEEE. :1-4 Dec, 2021

Relation: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

On mathematical analysis of a micro-scale Boltzmann-Maxwell’s PDEs model for a plasma flow influence by non-linear sinusoidal external electric field: Novel irreversibility analysis of plasma kinetic theory

Authors: Abdel Wahid, Taha Zakaraia ^a, Alaofi, Zaki Mrzog ^b, Radwan, Taha ^{c, ⁎}

Source: In Alexandria Engineering Journal February 2025 114:331-341

Impact of the Electron Velocity Overshoot to the Performance of Photoconductive THz Antenna

Authors: Slekas, Gediminas, Kancleris, Zilvinas, Urbanowicz, Andrzej, Ciegis, Raimondas

Source: 2020 23rd International Microwave and Radar Conference (MIKON) Microwave and Radar Conference (MIKON), 2020 23rd International. :309-314 Oct, 2020

Relation: 2020 23rd International Microwave and Radar Conference (MIKON)

Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics

Authors: Li, L., Wakejima, A.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(11):5535-5540 Nov, 2021

Optimized Design of Ni/GaN Schottky Barrier IMPATT Diode With n-type GaN Deep Level Defects

Authors: Zhang, Xiao-Yu, Lei, Hu, Du, Lin, Ji, Siwei, Li, Xiaotong, Li, Yang, Yang, Lin-An, Hao, Yue

Source: 2021 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC) Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC), 2021. :52-54 Oct, 2021

Relation: 2021 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC)

A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors

Authors: Kaushal, K.N., Mohapatra, N.R.

Source: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:334-341 2021

Impact of ion cyclotron range of frequencies wave induced localized fields on electron dynamics in EAST’s scrape-off layer

Authors: Zechen Wang, Nong Xiang, Chunyun Gan, Gen Li, Hailong Lu, Ge Zhuang

Source: Nuclear Fusion, Vol 65, Iss 4, p 046016 (2025)

Subject Terms: RF wave, ICRF, wave packet, electron velocity distribution, heat flux, Nuclear and particle physics. Atomic energy. Radioactivity, QC770-798

File Description: electronic resource

Relation: https://doaj.org/toc/0029-5515

Access URL: https://doaj.org/article/887755220a864e4ea74e8aab46be1775

Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs

Authors: Romanczyk, B., Guidry, M., Zheng, X., Li, H., Ahmadi, E., Keller, S., Mishra, U.K.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(4):1542-1546 Apr, 2020

Calculation Of The Characteristics Of The Electron Beam Formed By An Electron-Optical System With A Multi- Tip Field Emitter

Authors: Taradaev, Evgeny, Sominskii, Gennadii

Source: 2021 22nd International Vacuum Electronics Conference (IVEC) International Vacuum Electronics Conference (IVEC), 2021 22nd. :1-2 Apr, 2021

Relation: 2021 22nd International Vacuum Electronics Conference (IVEC)

A Computational Scheme of Propagator Method for Moment Equations to Derive Real-Space Electron Transport Coefficients in Gas Under Crossed Electric and Magnetic Fields

Authors: Sugawara, H.

Source: IEEE Transactions on Plasma Science IEEE Trans. Plasma Sci. Plasma Science, IEEE Transactions on. 47(2):1071-1082 Feb, 2019

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

Authors: Guangyuan Jiang, Peng Cui, Chen Fu, Yuanjie Lv, Ming Yang, Qianding Cheng, Yang Liu, Guangyuan Zhang

Source: Micromachines, Vol 15, Iss 9, p 1148 (2024)

Subject Terms: AlGaN/GaN HEMTs, bias voltage, effective electron velocity, polarization coulomb field scattering, Mechanical engineering and machinery, TJ1-1570

File Description: electronic resource

Relation: https://www.mdpi.com/2072-666X/15/9/1148; https://doaj.org/toc/2072-666X

Access URL: https://doaj.org/article/c0f37b1f2921458bb8e39da008c356a4

The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration

Authors: Ping-Hsun Chiu, Yi-Fan Tsao, Heng-Tung Hsu

Source: Results in Physics, Vol 59, Iss , Pp 107612- (2024)

Subject Terms: Access region, Dual gate, Electron velocity, GaN HEMT, Linearity, Millimeter-wave, Physics, QC1-999

File Description: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S221137972400295X; https://doaj.org/toc/2211-3797

Access URL: https://doaj.org/article/ca5c3c45f4b24a8a89df50c9f4410b6e

Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

Authors: Endoh, Akira, Watanabe, Issei, Kasamatsu, Akifumi, Mimura, Takashi

Source: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on. :261-264 Sep, 2014

Relation: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Theory of fluctuations in non-equilibrium electron—hot-phonon system

Authors: Matulionis, A., Ramonas, M., Katilius, R., Gantsevich, S. V.

Source: 2011 21st International Conference on Noise and Fluctuations Noise and Fluctuations (ICNF), 2011 21st International Conference on. :196-199 Jun, 2011

Relation: 2011 21st International Conference on Noise and Fluctuations (ICNF)

Qualitative and quantitative enhancement of parameter estimation for model-based diagnostics using automatic differentiation with an application to inertial fusion

Authors: A L Milder, A S Joglekar, W Rozmus, D H Froula

Source: Machine Learning: Science and Technology, Vol 5, Iss 1, p 015026 (2024)

Subject Terms: automatic differentiation, Thomson scattering, diagnostic analysis, electron velocity distribution function, Computer engineering. Computer hardware, TK7885-7895, Electronic computers. Computer science, QA75.5-76.95

File Description: electronic resource

Relation: https://doaj.org/toc/2632-2153

Access URL: https://doaj.org/article/9bcfb65e51ff4800b9c9676a69bdd302

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

Authors: Song, B., Sensale-Rodriguez, B., Wang, R., Guo, J., Hu, Z., Yue, Y., Faria, F., Schuette, M., Ketterson, A., Beam, E., Saunier, P., Gao, X., Guo, S., Fay, P., Jena, D., Xing, H. G.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 61(3):747-754 Mar, 2014