Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics.

Authors: Prokofieva, L.¹ lprokofieva496@gmail.com, Nasredinov, F.², Konstantinov, P.¹, Shabaldin, A.¹

Source: Semiconductors. Aug2017, Vol. 51 Issue 8, p1012-1016. 5p.

Subject Terms: *ZINC antimonides, *THERMOELECTRIC materials, *LOW temperatures, *CRYSTAL structure, *NUCLEAR cross sections

Preparation and properties of ZnSb-based thermoelectric material.

Authors: Panchenko, V. vppanchenko@mail.ru, Tabachkova, N.¹, Ivanov, A.², Senatulin, B.¹, Andreev, E.¹

Source: Semiconductors. Jul2017, Vol. 51 Issue 7, p920-923. 4p.

Subject Terms: *ZINC antimonides, *THERMOELECTRIC materials, *THERMAL properties of metals, *DOPING agents (Chemistry), *THERMAL stability

Facile synthesis via a solvent molecular template and formation mechanism of uniform zinc antimony nanorods.

Authors: Zhang, Haoran¹, Wang, Xinwei¹, Cai, Xinyang¹, Wang, Dengkui¹, Tang, Jilong¹, Fang, Xuan¹, Fang, Dan¹, Ma, Xiaohui¹, Sun, Xiuping¹, Wang, Xiaohua¹, Wei, Zhipeng¹

Source: Journal of Materials Science: Materials in Electronics; Jun2018, Vol. 29 Issue 12, p10445-10452, 8p

Thermal Stability and Electrical Transport Properties of Single-Crystalline β-ZnSb Co-doped by Ga/Sn.

Authors: Deng, Shuping¹, Tang, Yu¹, Li, Decong², Liu, Hongxia¹, Chen, Zhong¹, Shen, Lanxian¹, Deng, Shukang¹, skdeng@126.com

Source: Journal of Electronic Materials; Dec2017, Vol. 46 Issue 12, p6804-6810, 7p, 1 Diagram, 2 Charts, 5 Graphs

Low Resistance Ohmic Contact for ZnSb Thin Film.

Authors: Yin, Meimei¹, Zhong, Aihua¹, Luo, Jingting¹, Li, Fu¹, Zheng, Zhuanghao, Fan, Ping, fanping308@126.com

Source: Journal of Electronic Materials; May2017, Vol. 46 Issue 5, p3256-3261, 6p

Substrate temperature dependent surface morphology of nanostructured zinc antimonides thin films

Authors: Ahmad, A.M.F., Mukri, M.A.-R., Ismail, A.K., Omar, M.F.

Source: 2015 10th Asian Control Conference (ASCC) Control Conference (ASCC), 2015 10th Asian. :1-5 May, 2015

Relation: 2015 10th Asian Control Conference (ASCC)

Thermoelectric properties of Zn5Sb4In2-δ (δ = 0.15).

Authors: Wu, Y.¹, Litvinchuk, A. P.², Toberer, E. S.³, Snyder, G. J.⁴, Newman, N.⁵, Fischer, A.⁶, Scheidt, E.-W.⁶, Scherer, W.⁶, Häussermann, U.¹

Source: Journal of Applied Physics. Jun2012, Vol. 111 Issue 12, p123712. 7p.

Subject Terms: *ZINC antimonides, *INDIUM antimonide crystals, *ELECTRICAL resistivity, *INTERMETALLIC compounds, *THERMOELECTRICITY

Enhanced Thermoelectric Properties of In-Doped ZnSb Thin Film with Surface Nanocrystallization.

Authors: Zheng, Zhuang-hao, Fan, Ping¹, fanping308@126.com, Luo, Jing-ting, Liang, Guang-xing, lgx@szu.edu.cn

Source: Journal of Electronic Materials; Feb2017, Vol. 46 Issue 2, p1319-1323, 5p

Solid Liquid Interdiffusion Bonding of ZnSb Thermoelectric Material with Cu Electrode.

Authors: Lin, Y.¹, Lee, K.¹, Hwang, J.², Chu, H.², Hsu, C.², Chen, S.³, Chuang, T.¹, tunghan@ntu.edu.tw

Source: Journal of Electronic Materials; Oct2016, Vol. 45 Issue 10, p4935-4942, 8p, 7 Diagrams, 5 Graphs

Thermodynamic Description of the Ternary Sb-Sn-Zn System.

Authors: Gierlotka, Wojciech¹, wojtek@mail.ndhu.edu.tw

Source: Journal of Electronic Materials; Apr2016, Vol. 45 Issue 4, p2216-2221, 6p, 1 Diagram, 2 Charts, 9 Graphs

The Influence of Weak Tin Doping on the Thermoelectric Properties of Zinc Antimonide.

Authors: Shabaldin, A.¹, Prokof'eva, L.¹, Snyder, G.², Konstantinov, P.¹, Isachenko, G., Asach, A.³, a.asach@mail.ru

Source: Journal of Electronic Materials; Mar2016, Vol. 45 Issue 3, p1871-1874, 4p

Nanostructuring of Undoped ZnSb by Cryo-Milling.

Authors: Song, X.¹, xins@fys.uio.no, Valset, K.¹, Graff, J.S.², Thøgersen, A., Gunnæs, A.E.¹, Luxsacumar, S.², Løvvik, O.M., Snyder, G.J.³, Finstad, T.G.¹, tgf@fys.uio.no

Source: Journal of Electronic Materials; Aug2015, Vol. 44 Issue 8, p2578-2584, 7p, 3 Color Photographs, 1 Black and White Photograph, 2 Charts, 4 Graphs

Influence of the Exchange-Correlation Functional on the Electronic Properties of ZnSb as a Promising Thermoelectric Material.

Authors: Niedziółka, Kinga¹, Jund, Philippe¹, pjund@univ-montp2.fr

Source: Journal of Electronic Materials; Jun2015, Vol. 44 Issue 6, p1540-1546, 7p, 2 Charts, 4 Graphs

Influence of N-doping on the thermal stability and switching speed of ZnSb phase change material.

Authors: Zhu, Xiaoqin¹, Hu, Yifeng¹, hyf@jsut.edu.cn, Zou, Hua¹, Sui, Yongxing¹, Xue, Jianzhong¹, Shen, Dahua¹, Zhang, Jianhao¹, Song, Sannian², Song, Zhitang², Sun, Shunping³

Source: Journal of Materials Science: Materials in Electronics; Feb2015, Vol. 26 Issue 2, p1212-1216, 5p

Thermoelectric properties of zinc antimonide thin film deposited on flexible polyimide substrate by RF magnetron sputtering.

Authors: Fan, Ping, fanping308@126.com, Zheng, Zhuang-hao, Fan, Wei-fang¹, Zhang, Yin¹, Luo, Jing-ting¹, Zhang, Dong-ping¹, Liang, Guang-xing²

Source: Journal of Materials Science: Materials in Electronics; Nov2014, Vol. 25 Issue 11, p5060-5065, 6p

Reliable density functional calculations for the electronic structure of thermoelectric material ZnSb.

Authors: Zhao, Guang-Lin¹, Gao, Feng¹, Bagayoko, Diola¹

Source: AIP Advances. Oct2018, Vol. 8 Issue 10, pN.PAG-N.PAG. 8p.

Subject Terms: *THERMOELECTRIC materials, *ZINC antimonides, *DENSITY functional theory

Design of diffusion barrier and buffer layers for β-Zn4Sb3 mid-temperature thermoelectric modules.

Authors: Chen, Li-Wei¹, Wang, Cheng¹, Liao, Yi-Chia¹, Li, Chia-Lin¹, Chuang, Tung-Han¹, Hsueh, Chun-Hway¹ hsuehc@ntu.edu.tw

Source: Journal of Alloys & Compounds. Sep2018, Vol. 762, p631-636. 6p.

Subject Terms: *ZINC antimonides, *THERMOELECTRICITY, *SCANNING electron microscopes, *DIFFUSION barriers, *HIGH temperatures

The updated Zn–Sb phase diagram. How to make pure Zn13Sb10 (“Zn4Sb3”).

Authors: Lo, Chun-Wan Timothy¹, Svitlyk, Volodymyr², Chernyshov, Dmitry², Mozharivskyj, Yurij¹

Source: Dalton Transactions: An International Journal of Inorganic Chemistry. 9/7/2018, Vol. 47 Issue 33, p11512-11520. 9p.

Subject Terms: *ZINC antimonides, *THERMOELECTRIC materials, *STOICHIOMETRY

Enhancement of power factor in zinc antimonide thermoelectric thin film doped with titanium.

Authors: Li, Fu¹, Luo, Jing-ting¹, Fan, Ping¹, Zheng, Zhuang-hao^1,2, Liang, Guang-xing^1,2, Ma, Hong-li², Zhang, Xiang-hua²

Source: Materials Letters. Dec2017, Vol. 209, p455-458. 4p.

Subject Terms: *ZINC antimonides, *ELECTRIC properties of thin films, *POWER factor measurement, *THERMOELECTRIC materials, *TITANIUM, *MICROSTRUCTURE

Effect of Zn migration on the thermoelectric properties of Zn4Sb3 material.

Authors: Yang, Jian¹, Zhang, Xiangzhao¹, Yan, Junnan¹, Liu, Guiwu¹, Qiao, Guanjun^1,2, Ge, Bangzhi², Shi, Zhongqi²

Source: Ceramics International. Dec2017, Vol. 43 Issue 17, p15275-15280. 6p.

Subject Terms: *ZINC compounds, *ZINC antimonides, *POWER factor measurement, *ELECTRIC power factor, *THERMOELECTRICITY