32nm gate-first high-k/metal-gate technology for high performance low power applications

Authors: Diaz, C. H., Goto, K., Huang, H.T., Yasuda, Yuri, Tsao, C.P., Chu, T.T., Lu, W.T., Chang, Vincent, Hou, Y.T., Chao, Y.S., Hsu, P.F., Chen, C.L., Lin, K.C., Ng, J.A., Yang, W.C., Chen, C.H., Peng, Y.H., Chen, C.J., Chen, C.C., Yu, M..H., Yeh, L.Y., You, K.S., Chen, K.S., Thei, K.B., Lee, C.H., Yang, S.H., Cheng, J.Y., Huang, K.T., Liaw, J.J., Ku, Y., Jang, S.M., Chuang, H., Liang, M.S.

Source: 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008

Relation: 2008 IEEE International Electron Devices Meeting (IEDM)