Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect

Authors: Kim, Hae Jin, Park, Tae Hyung, Yoon, Kyung Jean, Kim, Gil Seop, Ha, Tae Jung, Kim, Soo Gil, Hwang, Cheol Seong

Source: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE 2nd. :319-321 Mar, 2018

Relation: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

Stateful logic circuit and material using memristors

Authors: Xu, Nuo, Shao, Xinglong, Yoon, Kyung Jean, Kim, Hae Jin, Kim, Kyung Min, Hwang, Cheol Seong

Source: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE. :10-12 Feb, 2017

Relation: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

In-Memory Hamming Error-Correcting Code in Memristor Crossbar

Authors: Bae, Woorham, Han, Jin-Woo, Yoon, Kyung Jean

Source: IEEE transactions on electron devices. 69(7):3700-3707

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Comprehensive Read Margin and BER Analysis of One Selector-One Memristor Crossbar Array Considering Thermal Noise of Memristor With Noise-Aware Device Model

Authors: Bae, Woorham, Yoon, Kyung Jean

Source: IEEE transactions on nanotechnology. 19:553-564

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All-printed triboelectric nanogenerator

Authors: Seol, Myeong-Lok, Han, Jin-Woo, Moon, Dong-Il, Yoon, Kyung Jean, Hwang, Cheol Seong, Meyyappan, M.

Source: In Nano Energy February 2018 44:82-88

Electrically-generated memristor based on inkjet printed silver nanoparticlesElectronic supplementary information (ESI) available. See DOI: 10.1039/c9na00329k

Authors: Yoon, Kyung Jean, Han, Jin-Woo, Moon, Dong-Il, Seol, Myeong Lok, Meyyappan, M., Kim, Han Joon, Hwang, Cheol Seong

Source: Nanoscale advances. 1(8):2990-2998

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A Variation-Tolerant, Sneak-Current-Compensated Readout Scheme for Cross-Point Memory Based on Two-Port Sensing Technique

Authors: Bae, Woorham, Yoon, Kyung Jean, Song, Taeksang, Nikolic, Borivoje

Source: IEEE transactions on circuits and systems.II.Express briefs. 65(12):1839-1843

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In‐Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application

Authors: Xu, Nuo, Park, Taegyun, Yoon, Kyung Jean, Hwang, Cheol Seong

Source: Physica status solidi.Rapid research letters. 15(9)

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A Novel Stateful Logic Device and Circuit for In‐Memory Parity Programming in Crossbar Memory

Authors: Yoon, Kyung Jean, Han, Jin‐Woo, Bae, Woorham

Source: Advanced Electronic Materials. 6(12)

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A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors

Authors: Xu, Nuo, Park, Tae Gyun, Kim, Hae Jin, Shao, Xinglong, Yoon, Kyung Jean, Park, Tae Hyung, Fang, Liang, Kim, Kyung Min, Hwang, Cheol Seong

Source: Advanced intelligent systems. 2(1)

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Review of Semiconductor Flash Memory Devices for Material and Process Issues.

Authors: Kim, Seung Soo, Yong, Soo Kyeom, Kim, Whayoung, Kang, Sukin, Park, Hyeon Woo, Yoon, Kyung Jean, Sheen, Dong Sun, Lee, Seho, Hwang, Cheol Seong

Source: Advanced Materials; 10/26/2023, Vol. 35 Issue 43, p1-22, 22p

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Authors: Yoon, Kyung Jean, Kim, Yumin, Hwang, Cheol Seong

Source: Advanced Electronic Materials. 5(9)

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Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability

Authors: Kim, Hae Jin, Park, Tae Hyung, Yoon, Kyung Jean, Seong, Won Mo, Jeon, Jeong Woo, Kwon, Young Jae, Kim, Yumin, Kwon, Dae Eun, Kim, Gil Seop, Ha, Tae Jung, Kim, Soo Gil, Yoon, Jung Ho, Hwang, Cheol Seong

Source: Advanced functional materials. 29(8)

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Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor

Authors: Xu, Nuo, Yoon, Kyung Jean, Kim, Kyung Min, Fang, Liang, Hwang, Cheol Seong

Source: Advanced Electronic Materials. 4(11)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100088855400.0x000001&indx=1&recIds=ETOCvdc_100088855400.0x000001

Weight Update Generation Circuit Utilizing Phase Noise of Integrated Complementary Metal–Oxide–Semiconductor Ring Oscillator for Memristor Crossbar Array Neural Network‐Based Stochastic Learning.

Authors: Bae, Woorham^1,2, wrbae@eecs.berkeley.edu, Yoon, Kyung Jean³, kyung.jean.yoon@intel.com

Source: Advanced Intelligent Systems (2640-4567); May2020, Vol. 2 Issue 5, p1-8, 8p

Double Layers-Stacked 3D 1D1R Crossbar Rram Integrating a Diode Selector with Rectification Ratio of ∼10^9
Pacific Rim Meeting on Electrochemical and Solid-State Science 2016

Authors: Yoon, Kyung Jean, Yoo, Si Jung, Park, Tae Hyung, Kwon, Yeong Jae, Kwon, Dae Eun, Hwang, C. S.

Source: Meeting abstracts / Electrochemical Society. 230(2):1445-1445

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Selector Requirements for 3D Resistive Switching Crossbar Array Based on Writing Margin Evaluation
Pacific Rim Meeting on Electrochemical and Solid-State Science 2016

Authors: Yoon, Kyung Jean, Bae, Woorham, Jeong, Deok-Kyoon, Hwang, C. S.

Source: Meeting abstracts / Electrochemical Society. 230(2):1463-1463

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN602115651&indx=1&recIds=ETOCCN602115651

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Physically Unclonable Function by an All-Printed Carbon Nanotube Network.

Authors: Moon, Dong-Il, Rukhin, Andrew, Gandhiraman, Ram P., Kim, Beomseok, Kim, Sunjin, Seol, Myeong-Lok, Yoon, Kyung Jean, Lee, Dongil, Koehne, Jessica, Han, Jin-Woo, Meyyappan, M.

Source: ACS Applied Electronic Materials; Jul2019, Vol. 1 Issue 7, p1162-1168, 7p

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