A study on Improvement of Electrical and Retention characteristics of Non-volatile Memory with Al2O3 Insulator

Authors: Yoon, Geonju, Kim, Jeongsoo, Shin, Donggi, Mallem, Kumar, Park, Jinsu, Kim, Jaemin, Cho, Jaehyun, Bae, Sangwoo, Kim, Jin-Seok, Kim, Hyun-Hoo, Yi, Junsin

Source: 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2019 26th International Workshop on. 26th:1-4 Jul, 2019

Relation: 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

Effect of IGZO thin films fabricated by Pulsed-DC and RF sputtering on TFT characteristics

Authors: Kim, Jaemin, Park, Jinsu, Yoon, Geonju, Khushabu, Agrawal, Kim, Jin-Seok, Pae, Sangwoo, Cho, Eun-Chel, Yi, Junsin

Source: In Materials Science in Semiconductor Processing December 2020 120

Temperature-dependent study of slow traps generation mechanism in HfO2/GeON/Ge(1 1 0) metal oxide semiconductor devices

Authors: Agrawal, Khushabu, Patil, Vilas, Barhate, Viral, Yoon, Geonju, Lee, Youn-Jung, Mahajan, Ashok, Yi, Junsin

Source: In Solid State Electronics May 2020 167

Investigation of asymmetric degradation in electrical properties of a-InGaZnO thin-film transistor arrays as a function of channel width-to-length aspect ratio.

Authors: Agrawal, Khushabu¹, Patil, Vilas², Chavan, G. T.¹, Yoon, Geonju¹, Kim, Jaemin¹, Park, Jinsu¹, Pae, Sangwoo³, Kim, JinSeok³, Cho, Eun-Chel¹, echo0211@skku.edu, Yi, Junsin¹, junsin@skku.edu

Source: Journal of Materials Science: Materials in Electronics; Jun2020, Vol. 31 Issue 12, p9826-9834, 9p

Improving Retention Properties of ALD-AlxOyCharge Trapping Layer for Non-Volatile Memory Application

Authors: Agrawal, Khushabu, Yoon, Geonju, Kim, Jeongsoo, Chavan, Ganesh, Kim, Jaemin, Park, Jinsu, Phong, Pham Duy, Cho, Eun-Chel, Yi, Junsin

Source: ECS Journal of Solid State Science and Technology; January 2020, Vol. 9 Issue: 4 p043002-043002, 1p