Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals.

Authors: Guiying Shen, Youwen Zhao, Yongbiao Bai, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Ding Yu

Source: Journal of Semiconductors; Apr2019, Vol. 40 Issue 4, p1-1, 1p

Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment.

Authors: Xiaoyu Chen, Youwen Zhao, Zhiyuan Dong, Guiying Shen, Yongbiao Bai, Jingming Liu, Hui Xie, Jiangbian He

Source: Journal of Semiconductors; Nov2017, Vol. 38 Issue 1, p1-1, 1p

Electrical and optical property of annealed Te-doped GaSb.

Authors: Jie Su, Tong Liu, Jingming Liu, Jun Yang, Guiying Shen, Yongbiao Bai, Zhiyuan Dong, Fangfang Wang, Youwen Zhao

Source: Journal of Semiconductors; Apr2017, Vol. 38 Issue 4, p1-1, 1p