Molecular HDD logic for encrypted massive data storage

Authors: Bingjie Guo, Xinhui Chen, An Chen, Jinxin Wang, Wuhong Xue, Tao Wang, Zhixin Wu, Xiaolong Zhong, Jianmin Zeng, Jinjin Li, Mao Li, Xiaohong Xu, Yu Chen, Gang Liu

Source: Nature Communications, Vol 16, Iss 1, Pp 1-11 (2025)

Subject Terms: Science

File Description: electronic resource

Relation: https://doaj.org/toc/2041-1723

Access URL: https://doaj.org/article/f5f7a65958e54c25808bbaeadecc644b

Stable antivortices in multiferroic ε-Fe2O3 with the coalescence of misaligned grains

Authors: Wuhong Xue, Tao Wang, Huali Yang, Huanhuan Zhang, Guohong Dai, Sheng Zhang, Ruilong Yang, Zhiyong Quan, Run-Wei Li, Jin Tang, Cheng Song, Xiaohong Xu

Source: Nature Communications, Vol 16, Iss 1, Pp 1-7 (2025)

Subject Terms: Science

File Description: electronic resource

Relation: https://doaj.org/toc/2041-1723

Access URL: https://doaj.org/article/d834359254944d7cabac9981e95db0e9

Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor

Authors: Peng Wang, Jie Li, Wuhong Xue, Wenjuan Ci, Fengxian Jiang, Lei Shi, Feichi Zhou, Peng Zhou, Xiaohong Xu

Source: Advanced Science, Vol 11, Iss 3, Pp n/a-n/a (2024)

Subject Terms: full‐vdW ferroelectric field effect transistor, multilevel memory, neuromorphic vision system, sensing‐memory‐computing, Science

File Description: electronic resource

Relation: https://doaj.org/toc/2198-3844

Access URL: https://doaj.org/article/2bd0a2952046419e8fb35f18b89cc691

Intrinsic vacancy in 2D defective semiconductor In2S3 for artificial photonic nociceptor

Authors: Peng Wang, Wuhong Xue, Wenjuan Ci, Ruilong Yang, Xiaohong Xu

Source: Materials Futures, Vol 2, Iss 3, p 035301 (2023)

Subject Terms: defective semiconductor, In2S3, intrinsic vacancy, artificial photonic nociceptors, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: https://doaj.org/toc/2752-5724

Access URL: https://doaj.org/article/28ad91406a554d75b25d263d60588902

Redox gated polymer memristive processing memory unit

Authors: Bin Zhang, Fei Fan, Wuhong Xue, Gang Liu, Yubin Fu, Xiaodong Zhuang, Xiao-Hong Xu, Junwei Gu, Run-Wei Li, Yu Chen

Source: Nature Communications, Vol 10, Iss 1, Pp 1-11 (2019)

Subject Terms: Science

File Description: electronic resource

Relation: https://doaj.org/toc/2041-1723

Access URL: https://doaj.org/article/873ea43a4a9f40f988b7a8d675ae6256

The investigation of giant magnetic moment in ultrathin Fe3O4 films

Authors: Xiaofen Guan, Guowei Zhou, Wuhong Xue, Zhiyong Quan, Xiaohong Xu

Source: APL Materials, Vol 4, Iss 3, Pp 036104-036104-6 (2016)

Subject Terms: Biotechnology, TP248.13-248.65, Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2166-532X

Access URL: https://doaj.org/article/acadee9ef592451085fc43277fe9e731

Intrinsically elastic polymer ferroelectric by precise slight cross-linking.

Authors: Liang Gao^1,2, Ben-Lin Hu³, hubenlin@nimte.ac.cn, Linping Wang¹, Jinwei Cao¹, He, Ri¹, Fengyuan Zhang¹, Zhiming Wang¹, Wuhong Xue⁴, Huali Yang¹, Run-Wei Li¹, runweili@nimte.ac.cn

Source: Science; 8/4/2023, Vol. 381 Issue 6657, p540-544, 5p, 4 Diagrams

The investigation of giant magnetic moment in ultrathin Fe3O4 films.

Authors: Xiaofen Guan, Guowei Zhou, Wuhong Xue, Zhiyong Quan, Xiaohong Xu

Source: APL Materials; 2016, Vol. 4 Issue 3, p1-6, 6p

Subject Terms: IRON oxides, MAGNETIC properties of thin films, MAGNETIZATION

Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).

Authors: Wenbin Zhang, Gang Liu, Xiaojian Zhu, Xinxin Chen, Liang Pan, Hongwei Tan, Wuhong Xue, Zhenghui Ji, Run-Wei Li, Jun Wang, Cheng Wang, Yu Chen

Source: Chemical Communications; 2014, Vol. 50 Issue 80, p11856-11858, 3p

Subject Terms: TRIPHENYLAMINE, OXIDATIVE coupling kinetics, CONJUGATED polymers, FRONTIER orbitals, SWITCHING circuits, ELECTRICAL resistivity, COMPUTER storage device performance